T835T-8G Datasheet 2 8 A 800 V D PAK Snubberless Triac Features A2 High static dV/dt High dynamic turn-off commutation (dl/dt)c 150 C maximum junction temperature A2 Three quadrants A1 Surge capability V , V = 900 V G DSM RSM Benefits: DPAK High immunity to false turn-on thanks to high static dV/dt Better turn-off in high temperature environments thanks to (dI/dt)c A2 Increase of thermal margin due to extended working T up to 150 C j A2: Anode2 Good thermal resistance due to non-insulated tab. A1: Anode1 G: Gate G Applications A1 General purpose AC line load switching Motor control circuits Home appliances Heating Lighting Inrush current limiting circuits Overvoltage crowbar protection Product status link Description T835T-8G Product summary Available in SMD, the T835T-8G Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability I 8 A T(RMS) is required. The T835T-8G can be used without a snubber RC circuit when the limits V /V defined are respected. 800 V DRM RRM 2 V /V D PAK package is UL-94,V0 flammability resin compliance. 900 V DSM RSM I Package environmentally friendly Ecopack 2 graded (RoHS and Halogen Free 35 mA GT compliance). Snubberless is a trademark of STMicroelectronics. DS12531 - Rev 3 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.T835T-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 128 C RMS on-state current (full sine wave) 8 A T(RMS) c t = 16.7 ms 63 Non repetitive surge peak on-state current (full cycle, T initial j I A TSM = 25 C t = 20 ms 60 2 2 2 t = 10 ms 24 I t I t value for fusing p A s dl/dt Critical rate of rise of on-state current, I = 2 x I , tr 100 ns T initial = 150 C, f = 100 Hz 100 A/s G GT j T = 125 C 800 V j V /V Repetitive peak off-state voltage (50-60 Hz) DRM RRM T = 150 C 600 V j V /V Non Repetitive peak off-state voltage t = 10 ms, T = 25 C 900 V DSM RSM p j I Peak gate current 4 A GM t = 20 s, T = 150 C p j V Peak Gate Voltage 5 V GM P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants T Value Unit j V = 12 V, R = 30 I - II - III Min. 1.75 mA D L I GT V = 12 V, R = 30 I - II - III Max. 35 mA D L V V = 12 V, R = 33 I - II - III Max. 1.3 V GT D L V V = 600 V, R = 3.3 k T = 150 C I - II - III Min. 0.2 V GD D L j I = 1.2 x I I - III Max. 60 mA G GT I L I = 1.2 x I II Max. 70 mA G GT (1) I I = 500 mA, gate open Max. 40 mA H T V = 536 V, gate open T = 125 C Min. 2000 V/s D j (1) dV/dt V = 402 V, gate open T = 150 C Min. 1000 V/s D j T = 125 C Min. 8 A/ms j (1) Without snubber, (dV/dt)c > 20 V/s (dl/dt)c T = 150 C Min. 4 A/ms j 1. For both polarities of A2 referenced to A1. DS12531 - Rev 3 page 2/11