X-On Electronics has gained recognition as a prominent supplier of BTA316B-600B,118 Triacs across the USA, India, Europe, Australia, and various other global locations. BTA316B-600B,118 Triacs are a product manufactured by WeEn Semiconductor. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

BTA316B-600B,118 WeEn Semiconductor

BTA316B-600B,118 electronic component of WeEn Semiconductor
BTA316B-600B,118 WeEn Semiconductor
BTA316B-600B,118 Triacs
BTA316B-600B,118  Semiconductors

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Part No. BTA316B-600B,118
Manufacturer: WeEn Semiconductor
Category: Triacs
Description: Triacs Thyristor TRIAC 600V 150A 3-Pin (2+Tab)
Datasheet: BTA316B-600B,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7875 ea
Line Total: USD 1.79 
Availability - 1112
Ship by Tue. 18 Mar to Thu. 20 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1112
Ship by Tue. 18 Mar to Thu. 20 Mar
MOQ : 1
Multiples : 1
1 : USD 1.7875
10 : USD 1.1556
100 : USD 0.7326
500 : USD 0.704
800 : USD 0.4983

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Taric
LoadingGif
 
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We are delighted to provide the BTA316B-600B,118 from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BTA316B-600B,118 and other electronic components in the Triacs category and beyond.

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BTA316B-600B 3Q Hi-Com Triac 23 July 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT404 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High voltage capability Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only 3. Applications Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 101 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 140 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 150 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 50 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 2 - 50 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA316B-600B 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- 2 - 50 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 60 mA H D j V on-state voltage I = 18 A T = 25 C Fig. 10 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 1000 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 16 A 20 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main 2 terminal 2 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA316B-600B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 SOT404 leads (one lead cropped) BTA316B-600B All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 23 July 2018 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors
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