BTA316B-800C,118 WeEn Semiconductor

BTA316B-800C 3Q Hi-Com Triac Rev.02 - 06 May 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High voltage capability Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only 3. Applications Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak off-state 800 V DRM voltage I RMS on-state current full sine wave T 101 C 16 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C t = 20 ms 140 A TSM j(init) p state current Fig. 4 Fig. 5 full sine wave T = 25 C t = 16.7 ms 150 A j(init) p T junction temperature 125 C j Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 35 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 2 - 35 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA316B-800C 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T2- G- 2 - 35 mA GT D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 35 mA H D j V on-state voltage I = 18 A T = 25 C Fig. 10 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 500 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 16 A 15 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 2 T2 main terminal 2 G 3 G gate sym051 mb T2 mounting base main terminal 2 2 1 3 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA316B-800C TO263 BTA316B-800CJ Reel 800 TO263E 26-May-2017 7. Marking Table 4. Marking codes Type number Marking codes BTA316B-800C BTA316B-800C BTA316B-800C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 06 May 2019 2 / 13