BTA316B-600E,118 WeEn Semiconductor

BTA316B-600E 3Q Hi-Com Triac 20 August 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT404 plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity. Thesensitive gatseries is intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct interfacing with low power drivers and microcontrollers Good immunity to false turn-on by dV/dt High commutation capability with sensitive gate High voltage capability Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only 3. Applications Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 101 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 140 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 150 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 10 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 10 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA316B-600E 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- - - 10 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 15 mA H D j V on-state voltage I = 18 A T = 25 C Fig. 10 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 50 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 16 A 3 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 125 C I = 16 A 6 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com V = 400 V T = 125 C I = 16 A 10 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main 2 terminal 2 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA316B-600E D2PAK plastic single-ended surface-mounted package (D2PAK) 3 SOT404 leads (one lead cropped) BTA316B-600E All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 20 August 2018 2 / 13