BTA2008W-600D,135 WeEn Semiconductor

BTA2008-600D 3Q Hi-Com Triac 28 September 2016 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct gate triggering from low power drivers and logic ICs High commutation capability with very sensitive gate High voltage capability Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only Very sensitive gate for easy logic level triggering 3. Applications Low power motor controls Small inductive loads e.g. solenoids, door locks, water valves Small loads in large white goods 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 70 C Fig. 1 - - 0.8 A T(RMS) lead Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 9 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 9.9 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 0.25 - 5 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 0.25 - 5 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA2008-600D 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- 0.25 - 5 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 10 mA H D j V on-state voltage I = 0.85 A T = 25 C Fig. 10 - 1.35 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 200 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C 0.5 - - A/ms com D j commutating current I = 0.8 A dV /dt = 10 V/s T(RMS) com gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T2 main terminal 2 T2 T1 G 2 G gate sym051 3 T1 main terminal 1 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA2008-600D TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BTA2008-600D All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 28 September 2016 2 / 13