T835H-6G-TR STMicroelectronics

T835H, T850H High temperature 8 A Snubberless Triacs Datasheet - production data Applications A2 Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum G motor, these 8 A Triacs provide a very high switching capability up to 150 C junction A1 A2 temperatures. The heatsink can be reduced, compared to traditional Triac, according to the high performance at given junction temperatures. G G A2 A2 A1 A1 Description Available in through-hole or surface mount TO-220AB TO-220AB Ins. packages, these Triacs series are suitable for A2 general purpose mains power ac switching. By using an internal ceramic pad, they provide voltage insulation (rated at 2500 V ). RMS G A2 Table 1: Device summary A1 DPAK Symbol Value Unit IT(RMS) 8 A V /V 600 V DRM RRM Features IGT 35 or 50 mA Medium current Triac 150 C max. T turn-off commutation j Low thermal resistance with clip bonding Very high 3 quadrant commutation capability Packages are RoHS (2002/95/EC) compliant UL certified (ref. file E81734) February 2018 DocID13564 Rev 4 1/13 www.st.com This is information on a product in full production. Characteristics T835H, T850H 1 Characteristics Table 2: Absolute ratings (limiting values) Symbol Parameter Value Unit DPAK, T = 133 C C RMS on-state current TO-220AB IT(RMS) 8 A (full sine wave) TO-220A Ins. TC = 116 C Non repetitive surge peak f = 50 Hz t = 20 ms 80 p ITSM on-state current A f = 60 Hz t = 16.7 ms 84 p (full cycle, Tj initial = 25 C) It It value for fusing t = 10 ms 42 As p Critical rate of rise of f = 50 Hz dl/dt on-state current Tj = 150 C 50 A/s IG = 2 x IGT , tr 100 ns V / Non repetitive surge peak V /V DSM DRM RRM t = 10 ms p Tj = 25 C V V off-state voltage + 100 RSM I Peak forward gate current tp = 20 s T = 150 C 4 A GM j PG(AV) Average gate power dissipation Tj = 150 C 1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +150 C Table 3: Electrical characteristics (Tj = 25 C unless otherwise specified) Value Unit Symbol Test Conditions Quadrant T835H T850H (1) 50 IGT 35 mA V = 12 V, R = 33 I - II - III Max. D L VGT 1.0 mA V V = V , R = 3.3 k I - II - III Min. 0.15 V GD D DRM L (2) IH IT = 500 mA Max. 35 75 mA I - III 50 60 IL IG = 1.2 x IGT Max. mA II 80 110 (2) dV/dt V = 2/3 x V , gate open T = 150 C Min. 1000 1500 V/s D DRM j (2) (dI/dt)c Without snubber Tj = 150 C Min. 11 14 A/ms Notes: (1) minimum I is guaranted at 20% of I max. GT GT (2) for both polarities of A2 referenced to A1. 2/13 DocID13564 Rev 4