X-On Electronics has gained recognition as a prominent supplier of T835H-6G-TR Triacs across the USA, India, Europe, Australia, and various other global locations. T835H-6G-TR Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T835H-6G-TR STMicroelectronics

T835H-6G-TR electronic component of STMicroelectronics
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Part No.T835H-6G-TR
Manufacturer: STMicroelectronics
Category: Triacs
Description: Triacs Hi temp 8A Triacs
Datasheet: T835H-6G-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15: USD 0.7242 ea
Line Total: USD 10.86 
Availability - 1063
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 15  Multiples: 1
Pack Size: 1
Availability Price Quantity
34
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0739
10 : USD 0.9149
30 : USD 0.8282
100 : USD 0.7302
500 : USD 0.6862
1000 : USD 0.6664

1063
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 15
Multiples : 1
15 : USD 0.7242
25 : USD 0.7169
100 : USD 0.6195
250 : USD 0.6132
500 : USD 0.5599
1000 : USD 0.5206

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
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Hts Code
Product Type
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Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T835H-6G-TR from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T835H-6G-TR and other electronic components in the Triacs category and beyond.

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T835H, T850H High temperature 8 A Snubberless Triacs Datasheet - production data Applications A2 Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum G motor, these 8 A Triacs provide a very high switching capability up to 150 C junction A1 A2 temperatures. The heatsink can be reduced, compared to traditional Triac, according to the high performance at given junction temperatures. G G A2 A2 A1 A1 Description Available in through-hole or surface mount TO-220AB TO-220AB Ins. packages, these Triacs series are suitable for A2 general purpose mains power ac switching. By using an internal ceramic pad, they provide voltage insulation (rated at 2500 V ). RMS G A2 Table 1: Device summary A1 DPAK Symbol Value Unit IT(RMS) 8 A V /V 600 V DRM RRM Features IGT 35 or 50 mA Medium current Triac 150 C max. T turn-off commutation j Low thermal resistance with clip bonding Very high 3 quadrant commutation capability Packages are RoHS (2002/95/EC) compliant UL certified (ref. file E81734) February 2018 DocID13564 Rev 4 1/13 www.st.com This is information on a product in full production. Characteristics T835H, T850H 1 Characteristics Table 2: Absolute ratings (limiting values) Symbol Parameter Value Unit DPAK, T = 133 C C RMS on-state current TO-220AB IT(RMS) 8 A (full sine wave) TO-220A Ins. TC = 116 C Non repetitive surge peak f = 50 Hz t = 20 ms 80 p ITSM on-state current A f = 60 Hz t = 16.7 ms 84 p (full cycle, Tj initial = 25 C) It It value for fusing t = 10 ms 42 As p Critical rate of rise of f = 50 Hz dl/dt on-state current Tj = 150 C 50 A/s IG = 2 x IGT , tr 100 ns V / Non repetitive surge peak V /V DSM DRM RRM t = 10 ms p Tj = 25 C V V off-state voltage + 100 RSM I Peak forward gate current tp = 20 s T = 150 C 4 A GM j PG(AV) Average gate power dissipation Tj = 150 C 1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +150 C Table 3: Electrical characteristics (Tj = 25 C unless otherwise specified) Value Unit Symbol Test Conditions Quadrant T835H T850H (1) 50 IGT 35 mA V = 12 V, R = 33 I - II - III Max. D L VGT 1.0 mA V V = V , R = 3.3 k I - II - III Min. 0.15 V GD D DRM L (2) IH IT = 500 mA Max. 35 75 mA I - III 50 60 IL IG = 1.2 x IGT Max. mA II 80 110 (2) dV/dt V = 2/3 x V , gate open T = 150 C Min. 1000 1500 V/s D DRM j (2) (dI/dt)c Without snubber Tj = 150 C Min. 11 14 A/ms Notes: (1) minimum I is guaranted at 20% of I max. GT GT (2) for both polarities of A2 referenced to A1. 2/13 DocID13564 Rev 4

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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