X-On Electronics has gained recognition as a prominent supplier of T835-600G Triacs across the USA, India, Europe, Australia, and various other global locations. T835-600G Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T835-600G STMicroelectronics

T835-600G electronic component of STMicroelectronics
T835-600G STMicroelectronics
T835-600G Triacs
T835-600G  Semiconductors

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See Product Specifications
Part No. T835-600G
Manufacturer: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 8A; 35mA; SMD; Snubberless™; tube; D2PAK
Datasheet: T835-600G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.4718 ea
Line Total: USD 471.8 
Availability - 5820
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
5820
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1000
Multiples : 1000
1000 : USD 0.4718
2000 : USD 0.4456
5000 : USD 0.4072
10000 : USD 0.4031
25000 : USD 0.3974

21
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 1.0671
10 : USD 0.9123
50 : USD 0.6052
100 : USD 0.5283
500 : USD 0.494
1000 : USD 0.4789
2000 : USD 0.4729

233
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.05
10 : USD 0.8904
23 : USD 0.763
50 : USD 0.7532
63 : USD 0.721

   
Manufacturer
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Technology
Type Of Semiconductor Component
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T835-600G from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T835-600G and other electronic components in the Triacs category and beyond.

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BTA08, BTB08, T810 T835, T850 Datasheet Snubberless, logic level and standard 8 A Triacs A2 Features On-state rms current, I 8 A T(RMS) G Repetitive peak off-state voltage, V / V 600 V to 800 V DRM RRM A1 A2 Triggering gate current, I 5 to 50 mA GT Description G G Available either in through-hole and surface-mount packages, these devices are A2 A2 A1 A1 suitable for general purpose AC switching. They can be used as an ON/OFF function TO-220AB TO-220AB Ins. in applications such as static relays, heating regulation, induction motor starting A2 circuits or for phase control operation in light dimmers and motor speed controllers, etc. The Snubberless versions (BTA, BTB08 xxxxW and T8 series) are specially G A2 A1 recommended for use on inductive loads, thanks to their high commutation DPAK performance. A2 A2 Logic level versions are designed to interface directly with low power drivers such as Microcontrollers. G A2 A1 By using an internal ceramic pad, the BTA series provide voltage insulated tab (rated G A2 IPAK DPAK at 2500 V ) in compliance with UL standards (file ref.: E81734). A1 RMS Product status link BTA08 BTB08 T810 T835 T850 DS2114 - Rev 15 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.BTA08, BTB08, T810, T835, T850 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit T = 110 C IPAK, DPAK,TO-220AB, DPAK c I RMS on-state current (full sine wave) 8 A T(RMS) T = 100 C TO-220AB Ins. c f = 50 Hz t = 20 ms 80 Non repetitive surge peak on-state current (full I A TSM cycle, T initial = 25 C) j t = 16.7 ms f = 60 Hz 84 p 2 2 2 t = 10 ms I t I t value for fusing 36 A s p Critical rate of rise of on-state current I = 2 x G T = 125 C dl/dt f = 120 Hz 50 A/s j I , tr 100 ns GT I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) Snubberless and logic level (3 j quadrants) T8 BTA08/BTB08 Symbol Parameter Quadrant Unit 10 35 50 TW SW CW BW (1) I I - II - III Max. 10 35 50 5 10 35 50 mA GT V = 12 V, R = 30 D L V I - II - III Max. 1.2 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA I - II - III Max. 15 35 75 10 15 35 50 mA T H I - III Max. 25 50 70 10 25 50 70 I I = 1.2 x I mA L G GT II Max. 30 60 110 15 30 60 80 (2) V = 67% V , gate open, T = 125 C Max. 40 400 1000 20 40 400 1000 V/s dV/dt D DRM j (dV/dt)c = 0.1 V/s, T = 125 C Min. 5.4 3.5 5.4 j (2) (dV/dt)c = 10 V/s, T = 125 C Min. 2.8 1.5 2.98 A/ms (dl/dt)c j Without snubber, T = 125 C Min. 4.5 7 4.5 7 j 1. Minimum I is guaranteed at 5 % of I max. GT GT 2. For both polarities of A2 referenced to A1 DS2114 - Rev 15 page 2/21

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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