NXH80B120H2Q0 Dual Boost Power Module The NXH80B120H2Q0 is a highdensity, integrated power module combines highperformance IGBTs with rugged antiparallel diodes including onboard thermistor. Features www.onsemi.com Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module 1200 V FSII IGBT V = 2.2 V CE(SAT) 1200 V SiC Diode V = 1.4 V F Low Inductive Layout Solderable Pins Thermistor Bare Copper and NickelPlated DBC Options Typical Applications Q0BOOST Solar Inverter CASE 180AJ Uninterruptible Power Supplies Energy Storage Systems MARKING DIAGRAM 5,6,15,16 D6 D5 Bypass Diode Bypass Diode NXH80B120H2Q0Sxx 7, 8 13,14 ATYYWW D3 D4 Boost Diode Boost Diode NXH80B120H2Q0Sxx = Device Code AT = Assembly & Test Site Code 9,10 11,12 YYWW = Year and Work Week Code D1 D2 T2 PIN CONNECTIONS T1 IGBT IGBT Boost IGBT 2 Boost IGBT 1 Protection Protection 20 1 Diode Diode 19 2 21 22 3,4 17,18 NTC Thermistor Figure 1. NXH80B120H2Q0SG Schematic Diagram ORDERING INFORMATION See detailed ordering, marking and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2019 Rev. 3 NXH80B120H2Q0/DNXH80B120H2Q0 Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25C unless otherwise noted J Rating Symbol Value Unit BOOST IGBT CollectorEmitter Voltage V 1200 V CES GateEmitter Voltage V 20 V GE Continuous Collector Current T = 80C (T = 175C) I 41 A h J C Pulsed Collector Current (T = 175C) I 123 A J Cpulse Maximum Power Dissipation T = 80C (T = 175C) P 103 W h J tot Short Circuit Withstand Time V = 15 V, V = 600 V, T 150C T 5 s GE CE J sc Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX BOOST DIODE Peak Repetitive Reverse Voltage V 1200 V RRM Continuous Forward Current T = 80C (T = 175C) I 28 A h J F Repetitive Peak Forward Current (limited by T , duty cycle = 10%) I 75 A J FRM Maximum Power Dissipation T = 80C (T = 175C) P 79 W h J tot Surge Forward Current (60 Hz single half sine wave) (T = 25C) I 69 A J FSM 2 2 2 I t value (60 Hz single halfsine wave) (T = 150C) I t 19 A s J Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX BYPASS DIODE / IGBT PROTECTION DIODE Peak Repetitive Reverse Voltage V 1600 V RRM Continuous Forward Current T = 80C (T = 175C) I 46 A h J F Repetitive Peak Forward Current (T = 175C, t limited by T ) I 130 A J p Jmax FRM Power Dissipation Per Diode T = 80C (T = 175C) P 66 W h J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX THERMAL PROPERTIES Storage Temperature range T 40 to 125 C stg INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 60 Hz V 3000 V is RMS Creepage distance 12.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. Table 2. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Module Operating Junction Temperature T 40 (T 25) C J jmax Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2