X-On Electronics has gained recognition as a prominent supplier of IXGK55N120A3H1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. IXGK55N120A3H1 IGBT Modules are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

IXGK55N120A3H1 IXYS

IXGK55N120A3H1 electronic component of IXYS
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Part No.IXGK55N120A3H1
Manufacturer: IXYS
Category: IGBT Modules
Description: IGBT Modules Low-Frequency Range Low Vcesat w/ Diode
Datasheet: IXGK55N120A3H1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
300: USD 21.492 ea
Line Total: USD 6447.6 
Availability - 0
MOQ: 300  Multiples: 300
Pack Size: 300
Availability Price Quantity
0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 300
Multiples : 300
300 : USD 21.492

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 25.914
2 : USD 24.514
3 : USD 24.5

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Package / Case
Series
Brand
Mounting Style
Maximum Gate Emitter Voltage
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the IXGK55N120A3H1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXGK55N120A3H1 and other electronic components in the IGBT Modules category and beyond.

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Advance Technical Information TM GenX3 1200V V = 1200V IXGK55N120A3H1 CES I = 55A IGBTs w/ Diode IXGX55N120A3H1 C110 V 2.3V CE(sat) Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V G CES J C Tab V T = 25C to 150C, R = 1M 1200 V EE CGR J GE V Continuous 20 V GES V Transient 30 V TM GEM PLUS247 (IXGX) I T = 25C ( Chip Capability ) 125 A C25 C I T = 110C 55 A C110 C I T = 25C (Lead RMS Limit) 120 A LRMS C I T = 25C, 1ms 400 A CM C SSOA V = 15V, T = 125C, R = 3 I = 110 A G GE VJ G CM C Tab (RBSOA) Clamped Inductive Load 0.8 V E CES P T = 25C 460 W C C G = Gate E = Emitter T -55 ... +150 C J C = Collector Tab = Collector T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD z Optimized for Low Conduction Losses M Mounting Torque ( IXGK ) 1.13/10 Nm/lb.in. d z Anti-Parallel Ultra Fast Diode F Mounting Force ( IXGX ) 20..120/4.5..27 N/lb. C Weight TO-264 10 g Advantages PLUS247 6 g z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications V I = 1mA, V = V 3.0 5.0 V GE(th) C CE GE z Power Inverters I V = V , V = 0V 100 A z CES CE CES GE UPS Note 1, T = 125C 2.0 mA z J Motor Drives z I V = 0V, V = 20V 100 nA SMPS GES CE GE z PFC Circuits V I = I , V = 15V, Note 2 1.85 2.3 V CE(sat) C C110 GE z Battery Chargers T = 125C 1.90 J z Welding Machines z Lamp Ballasts z Inrush Current Protection Circuits 2010 IXYS CORPORATION, All Rights Reserved DS100227(01/10)IXGK55N120A3H1 IXGX55N120A3H1 Symbol Test Conditions Characteristic Values TO-264 (IXGK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = I , V = 10V, Note 2 30 45 S fs C C110 CE C 4340 pF ies C V = 25V, V = 0V, f = 1 MHz 300 pF oes CE GE C 115 pF res Q 185 nC g(on) Q I = I , V = 15V, V = 0.5 V 25 nC ge C C110 GE CE CES Q 75 nC gc t 23 ns d(on) Inductive load, T = 25C J t 42 ns ri I = I , V = 15V E 5.1 mJ C C110 GE on Terminals: 1 = Gate t 365 ns V = 0.8 V , R = 3 2 = Collector d(off) CE CES G 3 = Emitter t 282 ns Note 3 fi E 13.3 mJ off t 24 ns d(on) Inductive load, T = 125C t 46 ns J ri I = I , V = 15V E 9.5 mJ C C110 GE on t 618 ns d(off) V = 0.8 V , R = 3 CE CES G t 635 ns fi Note 3 E 29.0 mJ off R 0.27 C/W thJC R 0.15 C/W thCK TM PLUS 247 (IXGX) Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 2 1.85 2.5 V F F GE T = 150C 1.90 V J t 200 ns rr I = 60A, V = 0V, F GE -di /dt = 350A/s, V = 600V, T = 100C I 24.6 A F R J RM R 0.42 C/W thJC Terminals: 1 = Gate 2 = Collector 3 = Emitter Notes: Dim. Millimeter Inches 1. Part must be heatsunk for high-temp Ices measurement. Min. Max. Min. Max. 2. Pulse test, t 300 s, duty cycle, d 2%. A 4.83 5.21 .190 .205 3. Switching times & energy losses may increase for higher V (Clamp), T or R . A 2.29 2.54 .090 .100 1 CE J G A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 ADVANCE TECHNICAL INFORMATION C 0.61 0.80 .024 .031 The product presented herein is under development. The Technical Specifications offered are derived D 20.80 21.34 .819 .840 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a E 15.75 16.13 .620 .635considered reflectio of the anticipated result. IXYS reserves the right to change limits, test e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 conditions, and dimensions without notice. L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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