/ Technical Information IGBT- IFS150B12N3E4P B11 IGBT-Module MIPAQbase /IGBT4 pressfit MIPAQbase module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / pre applied Thermal Interface Material / Preliminary Data J V = 1200V CES IC nom = 150A / ICRM = 300A Typical Applications Motor Drives Servo Drives Electrical Features Low Switching Losses V Low V CEsat CEsat T = 150C T = 150C vj op vj op Mechanical Features High Power and Thermal Cycling Capability Isolated Base Plate Copper Base Plate PressFIT PressFIT Contact Technology Standard Housing Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: NK date of publication: 2015-01-26 approved by: RS revision: 2.0 UL approved (E83335) 1 / Technical Information IGBT- IFS150B12N3E4P B11 IGBT-Module Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 95C, T = 175C I 150 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 220 A t = 1 ms I 300 A P CRM Repetitive peak collector current T = 25C, T = 175C P 750 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 150 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 150 A, V = 15 V T = 150C 2,05 V C GE vj I = 5,70 mA, V = V , T = 25C V 5,25 5,80 6,35 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 1,15 C Gate charge T = 25C R 5,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 9,30 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,51 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 150 A, V = 600 V T = 25C 0,19 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,20 s R = 1,1 T = 150C 0,21 s Gon vj () I = 150 A, V = 600 V T = 25C 0,025 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 1,1 T = 150C 0,03 s Gon vj () I = 150 A, V = 600 V T = 25C 0,40 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,48 s R = 1,1 T = 150C 0,51 s Goff vj () I = 150 A, V = 600 V T = 25C 0,06 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 1,1 T = 150C 0,13 s Goff vj () I = 150 A, V = 600 V, L = 40 nH T = 25C 5,00 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 6000 A/s (Tvj = 150C) Tvj = 125C Eon 9,00 mJ R = 1,1 T = 150C 10,0 mJ Gon vj ( I = 150 A, V = 600 V, L = 40 nH T = 25C 12,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 18,0 mJ R = 1,1 T = 150C 19,0 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 600 A IGBT / per IGBT R 0,20 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink valid with IFX pre-applied thermal interface material T -40 150 C vj op Temperature under switching conditions prepared by: NK date of publication: 2015-01-26 approved by: RS revision: 2.0 2