/ Technical Information IGBT- FF600R12ME4C IGBT-modules EconoDUAL3 /IGBT4 NTC EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC V = 1200V CES I = 600A / I = 1200A C nom CRM Typical Applications High Power Converters Motor Drives Servo Drives UPS UPS Systems Wind Turbines Electrical Features V Low V CEsat CEsat Tvj op = 150C Tvj op = 150C V V with positive Temperature Coefficient CEsat CEsat Mechanical Features High Power Density Isolated Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: KY date of publication: 2013-11-05 approved by: MK revision: 3.0 1 / Technical Information IGBT- FF600R12ME4C IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 1060 A t = 1 ms I 1200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 4050 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 600 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 600 A, V = 15 V T = 150C 2,05 V C GE vj I = 23,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 4,40 C Gate charge T = 25C R 1,2 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 37,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 2,05 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 3,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 600 A, V = 600 V T = 25C 0,18 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,22 s R = 0,51 T = 150C 0,22 s Gon vj () I = 600 A, V = 600 V T = 25C 0,07 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 0,51 T = 150C 0,08 s Gon vj () I = 600 A, V = 600 V T = 25C 0,45 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,55 s R = 0,51 T = 150C 0,59 s Goff vj () I = 600 A, V = 600 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 0,51 T = 150C 0,12 s Goff vj () I = 600 A, V = 600 V, L = 35 nH T = 25C 29,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 7000 A/s (Tvj = 150C) Tvj = 125C Eon 47,0 mJ R = 0,51 T = 150C 53,5 mJ Gon vj ( I = 600 A, V = 600 V, L = 35 nH T = 25C 55,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3100 V/s (Tvj = 150C)Tvj = 125C Eoff 81,5 mJ R = 0,51 T = 150C 90,0 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 2700 A IGBT / per IGBT R 0,037 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,035 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: KY date of publication: 2013-11-05 approved by: MK revision: 3.0 2