X-On Electronics has gained recognition as a prominent supplier of FF600R12ME4CP IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FF600R12ME4CP IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FF600R12ME4CP Infineon

FF600R12ME4CP electronic component of Infineon
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See Product Specifications
Part No.FF600R12ME4CP
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules MEDIUM POWER ECONO
Datasheet: FF600R12ME4CP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6: USD 426.864 ea
Line Total: USD 2561.18 
Availability - 0
MOQ: 6  Multiples: 6
Pack Size: 6
Availability Price Quantity
0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 6
Multiples : 6
6 : USD 426.864
12 : USD 397.44
102 : USD 387.756
504 : USD 370.644
1002 : USD 370.632
10002 : USD 370.62

   
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We are delighted to provide the FF600R12ME4CP from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FF600R12ME4CP and other electronic components in the IGBT Modules category and beyond.

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/ Technical Information IGBT- FF600R12ME4C IGBT-modules EconoDUAL3 /IGBT4 NTC EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC V = 1200V CES I = 600A / I = 1200A C nom CRM Typical Applications High Power Converters Motor Drives Servo Drives UPS UPS Systems Wind Turbines Electrical Features V Low V CEsat CEsat Tvj op = 150C Tvj op = 150C V V with positive Temperature Coefficient CEsat CEsat Mechanical Features High Power Density Isolated Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: KY date of publication: 2013-11-05 approved by: MK revision: 3.0 1 / Technical Information IGBT- FF600R12ME4C IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 1060 A t = 1 ms I 1200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 4050 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 600 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 600 A, V = 15 V T = 150C 2,05 V C GE vj I = 23,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 4,40 C Gate charge T = 25C R 1,2 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 37,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 2,05 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 3,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 600 A, V = 600 V T = 25C 0,18 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,22 s R = 0,51 T = 150C 0,22 s Gon vj () I = 600 A, V = 600 V T = 25C 0,07 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 0,51 T = 150C 0,08 s Gon vj () I = 600 A, V = 600 V T = 25C 0,45 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,55 s R = 0,51 T = 150C 0,59 s Goff vj () I = 600 A, V = 600 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 0,51 T = 150C 0,12 s Goff vj () I = 600 A, V = 600 V, L = 35 nH T = 25C 29,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 7000 A/s (Tvj = 150C) Tvj = 125C Eon 47,0 mJ R = 0,51 T = 150C 53,5 mJ Gon vj ( I = 600 A, V = 600 V, L = 35 nH T = 25C 55,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3100 V/s (Tvj = 150C)Tvj = 125C Eoff 81,5 mJ R = 0,51 T = 150C 90,0 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 2700 A IGBT / per IGBT R 0,037 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,035 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: KY date of publication: 2013-11-05 approved by: MK revision: 3.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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