Technische Information / Technical Information IGBT-Modul FF600R12ME4A B11 IGBT-Module EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC V = 1200V CES I = 600A / I = 1200A C nom CRM Typische Anwendungen Typical Applications Elektro- und Hybridnutzfahrzeuge Construction, Commercial and Agriculture Vehicles Hochleistungsumrichter High Power Converters Motorantriebe Motor Drives Servoumrichter Servo Drives Elektrische Eigenschaften Electrical Features Niedriges VCEsat Low VCEsat T = 150C T = 150C vj op vj op V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Hohe Last- und thermische Wechselfestigkeit High Power and Thermal Cycling Capability Hohe Leistungsdichte High Power Density Isolierte Bodenplatte Isolated Base Plate PressFIT Verbindungstechnik PressFIT Contact Technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: KY date of publication: 2015-09-09 approved by: KV revision: V3.0 1Technische Information / Technical Information IGBT-Modul FF600R12ME4A B11 IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 950 A Grenzeffektivstrom der Modul DC-Kontakte TTerminal 105C, TC = 112C 415 I A TRMS Maximum RMS module DC-terminal current T 105C, T = 139C 370 Terminal C Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung TC = 25C, Tvj max = 175C Ptot 3350 W Total power dissipation Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 600 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 600 A, V = 15 V T = 150C 2,05 V C GE vj Gate-Schwellenspannung IC = 23,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 4,40 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,2 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 37,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,05 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,15 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,17 s GE vj RGon = 0,51 Tvj = 150C 0,17 s Anstiegszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,05 s t r Rise time, inductive load V = 15 V T = 125C 0,06 s GE vj RGon = 0,51 Tvj = 150C 0,06 s Abschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,38 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,47 s GE vj RGoff = 0,51 Tvj = 150C 0,50 s Fallzeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,07 s t f Fall time, inductive load V = 15 V T = 125C 0,11 s GE vj RGoff = 0,51 Tvj = 150C 0,12 s Einschaltverlustenergie pro Puls IC = 600 A, VCE = 600 V, LS = 35 nH Tvj = 25C 18,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 8700 A/s (T = 150C) T = 125C E 40,5 mJ GE vj vj on RGon = 0,51 , Vclamp, GE = 18 V Tvj = 150C 48,5 mJ Abschaltverlustenergie pro Puls IC = 600 A, VCE = 600 V, LS = 35 nH Tvj = 25C 45,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 3300 V/s (T = 150C)T = 125C E 70,0 mJ GE vj vj off RGoff = 0,51 Tvj = 150C 78,0 mJ Kurzschluverhalten VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 2700 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,0450 K/W thJC Thermal resistance, junction to case prepared by: KY date of publication: 2015-09-09 approved by: KV revision: V3.0 2