Technische Information / Technical Information IGBT-Modul FF1400R12IP4P IGBT-Module PrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode PrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1200V CES I = 1400A / I = 2800A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit High short-circuit capability Hohe Stostromfestigkeit High surge current capability Hohe Stromdichte High current density Tvj op = 150C Tvj op = 150C V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor RoHS konform RoHS compliant Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: SM date of publication: 2016-09-06 approved by: RN revision: V3.2 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FF1400R12IP4P IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 60C, T = 175C I 1400 A H vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 2800 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 1400 A, V = 15 V T = 25C 1,75 2,05 V C GE vj Collector-emitter saturation voltage I = 1400 A, V = 15 V T = 125C V 2,05 2,40 V C GE vj CE sat IC = 1400 A, VGE = 15 V Tvj = 150C 2,15 2,50 V Gate-Schwellenspannung IC = 49,0 mA, VCE = VGE, Tvj = 25C VGEth 5,00 5,80 6,50 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 9,60 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,8 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 82,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 4,60 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 1400 A, VCE = 600 V Tvj = 25C 0,20 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,21 s GE vj RGon = 1,0 Tvj = 150C 0,21 s Anstiegszeit, induktive Last IC = 1400 A, VCE = 600 V Tvj = 25C 0,12 s t r Rise time, inductive load V = 15 V T = 125C 0,13 s GE vj RGon = 1,0 Tvj = 150C 0,13 s Abschaltverzgerungszeit, induktive Last IC = 1400 A, VCE = 600 V Tvj = 25C 0,87 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,95 s GE vj RGoff = 1,0 Tvj = 150C 0,97 s Fallzeit, induktive Last IC = 1400 A, VCE = 600 V Tvj = 25C 0,20 s t f Fall time, inductive load V = 15 V T = 125C 0,23 s GE vj RGoff = 1,0 Tvj = 150C 0,23 s Einschaltverlustenergie pro Puls IC = 1400 A, VCE = 600 V, LS = 30 nH Tvj = 25C 65,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 8600 A/s (T = 150C) T = 125C E 80,0 mJ GE vj vj on RGon = 1,0 Tvj = 150C 95,0 mJ Abschaltverlustenergie pro Puls IC = 1400 A, VCE = 600 V, LS = 30 nH Tvj = 25C 215 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2500 V/s (T = 150C)T = 125C E 280 mJ GE vj vj off RGoff = 1,0 Tvj = 150C 305 mJ Kurzschluverhalten VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 5600 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 30,5 K/kW Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: SM date of publication: 2016-09-06 approved by: RN revision: V3.2 2