X-On Electronics has gained recognition as a prominent supplier of NXH160T120L2Q2F2SG IGBT Modules across the USA, India, Europe, Australia, and various other global locations. NXH160T120L2Q2F2SG IGBT Modules are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

NXH160T120L2Q2F2SG ON Semiconductor

NXH160T120L2Q2F2SG electronic component of ON Semiconductor
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Part No.NXH160T120L2Q2F2SG
Manufacturer: ON Semiconductor
Category: IGBT Modules
Description: IGBT Modules PIM 1200V 160A SPLIT TNP IGBT
Datasheet: NXH160T120L2Q2F2SG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12: USD 85.345 ea
Line Total: USD 1024.14 
Availability - 11
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 12  Multiples: 12
Pack Size: 12
Availability Price Quantity
11
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 12
Multiples : 12
12 : USD 85.345

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Technology
Brand
Mounting Style
Maximum Gate Emitter Voltage
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NXH160T120L2Q2F2SG from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NXH160T120L2Q2F2SG and other electronic components in the IGBT Modules category and beyond.

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NXH160T120L2Q2F2SG Split T-Type NPC Power Module 1200 V, 160 A IGBT, 600 V, 100 A IGBT The NXH160T120L2Q2F2SG is a power module containing a split T type neutral point clamped threelevel inverter, consisting of two www.onsemi.com 160 A / 1200 V Half Bridge IGBTs with inverse diodes, two Neutral Point 120A/600V rectifiers, two 100A/600V Neutral Point IGBTs with inverse diodes, two Half Bridge 60 A / 1200 V rectifiers and a negative temperature coefficient thermistor (NTC). Features Split Ttype Neutral Point Clamped Threelevel Inverter Module 1200 V IGBT Specifications: V = 2.15 V, E = 4300 J CE(SAT) SW 600 V IGBT specifications: V = 1.47 V, E = 2560 J CE(SAT) SW Baseplate Q2PACK Solderable Pins CASE 180AK Thermistor Typical Applications MARKING DIAGRAM Solar Inverters NXH160T120L2Q2F2SG Uninterruptible Power Supplies ATYYWW 2732 16 NXH160T120L2Q2F2SG = Device Code YYWW = Year and Work Week Code T1 A = Assembly Site Code HALF BRIDGE D1 HALF BRIDGE FREEWHEEL DIODE HALF BRIDGE T = Test Site Code IGBT D5 INVERSE DIODE 56 NEUTRAL POINT G = PbFree Package INVERSE DIODE D2 55 D6 4449 710 NEUTRAL POINT T2 FREEWHEEL DIODE NEUTRAL PIN CONNECTIONS POINT IGBT 52 51 50 33 34 NEUTRAL 35 POINT IGBT NEUTRAL POINT FREEWHEEL DIODE 2326 T3 3843 D7 T4 NEUTRAL POINT D8 HALF BRIDGE D3 INVERSE DIODE D4 HALF BRIDGE IGBT FREEWHEEL DIODE HALF BRIDGE 36 INVERSE DIODE 37 53 54 NTC ORDERING INFORMATION 1116 1722 See detailed ordering and shipping information on page 5 of this data sheet. Figure 1. NXH160T120L2Q2F2SG Schematic Diagram Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2017 Rev. 0 NXH160T120L2Q2/DNXH160T120L2Q2F2SG Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25C unless otherwise noted J Rating Symbol Value Unit HALF BRIDGE IGBT CollectorEmitter Voltage V 1200 V CES GateEmitter Voltage V 20 V GE Continuous Collector Current T = 80C ( T = 175C) I 181 A h J C Pulsed Collector Current (T = 175C) I 543 A J Cpulse Maximum Power Dissipation T = 80C (T = 175C) P 500 W h J tot Short Circuit Withstand Time V = 15 V, V = 600 V, T 150C T 5 s GE CE J sc Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX NEUTRAL POINT IGBT CollectorEmitter Voltage V 600 V CES GateEmitter Voltage V 20 V GE Continuous Collector Current T = 80C (T = 175C) I 116 A h J C Pulsed Collector Current (T = 175C) I 348 A J Cpulse Maximum Power Dissipation T = 80C (T = 175C) P 232 W h J tot Short Circuit Withstand Time V = 15 V, V = 400 V, T 150C T 5 s GE CE J sc Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX HALF BRIDGE FREEWHEEL DIODE Peak Repetitive Reverse Voltage V 1200 V RRM Continuous Forward Current T = 80C (T = 175C) I 56 A h J F Repetitive Peak Forward Current (T = 175C, t limited by T ) I 150 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 142 W h J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX HALF BRIDGE INVERSE DIODE Peak Repetitive Reverse Voltage V 1200 V RRM Continuous Forward Current T = 80C (T = 175C) I 19 A h J F Repetitive Peak Forward Current (T = 175C, t limited by T ) I 50 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 63 W h J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX NEUTRAL POINT FREEWHEEL DIODE Peak Repetitive Reverse Voltage V 600 V RRM Continuous Forward Current T = 80C (T = 175C) I 132 A h J F Repetitive Peak Forward Current (T = 175C, t limited by T ) I 300 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 198 W h J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX NEUTRAL POINT INVERSE DIODE Peak Repetitive Reverse Voltage V 600 V RRM Continuous Forward Current T = 80C (T = 175C) I 38 A h J F Repetitive Peak Forward Current (T = 175C, t limited by T ) I 110 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 79 W h J tot Minimum Operating Junction Temperature T 40 C JMIN www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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