/ Technical Information IGBT- FZ2400R17HP4 B2 IGBT-Module IHM-B /IGBT4 IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES IC nom = 2400A / ICRM = 4800A Typical Applications Resonant inverter applications High power converters Traction drives Wind turbines Electrical Features T Extended operating temperature T vj op vj op V Low V CEsat CEsat Enlarged diode for regenerative operation Mechanical Features 4 kV 1 4 kV AC 1min insulation AlSiC AlSiC base plate for increased thermal cycling capability CTI > 400 Package with CTI > 400 High creepage and clearance distances High power and thermal cycling capability High power density IHM B IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 UL approved (E83335) 1 / Technical Information IGBT- FZ2400R17HP4 B2 IGBT-Module IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 100C, T = 175C I 2400 A C vj max C nom Continuous DC collector current t = 1 ms I 4800 A P CRM Repetitive peak collector current T = 25C, T = 175C P 13,0 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 2400 A, V = 15 V T = 25C 1,90 2,25 V C GE vj Collector-emitter saturation voltage I = 2400 A, V = 15 V T = 125C V 2,30 V C GE vj CE sat I = 2400 A, V = 15 V T = 150C 2,40 V C GE vj I = 96,0 mA, V = V , T = 25C V 5,20 5,80 6,40 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 25,5 C Gate charge T = 25C R 0,81 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 195 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 6,30 nF vj CE GE res Reverse transfer capacitance - VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 2400 A, V = 900 V T = 25C 0,615 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,67 s R = 0,5 T = 150C 0,70 s Gon vj () I = 2400 A, V = 900 V T = 25C 0,21 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,22 s R = 0,5 T = 150C 0,23 s Gon vj () I = 2400 A, V = 900 V T = 25C 1,30 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,40 s R = 0,5 T = 150C 1,45 s Goff vj () I = 2400 A, V = 900 V T = 25C 0,19 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,33 s R = 0,5 T = 150C 0,36 s Goff vj () I = 2400 A, V = 900 V, L = 50 nH T = 25C 470 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 10500 A/s (Tvj = 150C)Tvj = 125C Eon 680 mJ R = 0,5 T = 150C 720 mJ Gon vj ( I = 2400 A, V = 900 V, L = 50 nH T = 25C 660 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2800 V/s (Tvj = 150C)Tvj = 125C Eoff 830 mJ R = 0,5 T = 150C 880 mJ Goff vj V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 9500 A IGBT / per IGBT R 8,51 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 14,5 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 2