DATA SHEET www.onsemi.com Q1 3-Phase TNPC Module NXH40T120L3Q1 The NXH40T120L2Q1 is a power module containing a three channel Ttype neutralpoint clamped (TNPC) circuit. Each channel has two 1200 V, 40 A IGBTs with inverse diodes and two 650 V, 25 A IGBTs with inverse diodes. The module contains an NTC thermistor. Q1 3TNPC CASE 180AS Features Solder pins follow similar pattern Low Package Height Compact 82.5 mm x 37.4 mm x 12 mm Package Options with Pressfit Pins and Solder Pins MARKING DIAGRAM Options with Preapplied Thermal Interface Material (TIM) and without Preapplied TIM NXH40T120L3Q1xG ATYYWW Thermistor This Device is PbFree and is RoHS Compliant NXH40T120L3Q1x = Device Code Applications A = Assembly Site Code Solar Inverters T = Test Site Code UPS YYWW = Year and Work Week Code G = PbFree Package Energy Storage Systems PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Figure 1. NXH40T120L3Q1 Schematic Diagram Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2021 Rev. 2 NXH40T120L3Q1/DNXH40T120L3Q1 MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit IGBT (Q1, Q4, Q5, Q8, Q9, Q12) Collector Emitter Voltage VCES 1200 V Gate Emitter Voltage VGE 20 V Continuous Collector Current T = 80C (T = 175C) I 40 A C J C Pulsed Collector Current (T = 175C) ICpulse 120 A J Maximum Power Dissipation (T = 175 C) Ptot 145 W J Minimum Operating Junction Temperature TJMIN 40 C Maximum Operating Junction Temperature TJMAX 175 C DIODE (D1, D4, D5, D8, D9, D12) Peak Repetitive Reverse Voltage VRRM 1200 V Continuous Forward Current T = 80C (T = 175C) I 25 A C J F Repetitive Peak Forward Current (T = 175C) IFRM 75 A J Maximum Power Dissipation (T = 175C) Ptot 55 W J Minimum Operating Junction Temperature TJMIN 40 C Maximum Operating Junction Temperature TJMAX 175 C IGBT+DIODE (Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11) Collector Emitter Voltage 650 V VCES Gate Emitter Voltage 20 V VGE Continuous Collector Current T = 80C (T = 175C) I 42 A C J C Pulsed Collector Current (T = 175C) ICpulse 126 A J Maximum Power Dissipation (T = 175C) Ptot 146 W J C Minimum Operating Junction Temperature TJMIN 40 C Maximum Operating Junction Temperature TJMAX 175 THERMAL PROPERTIES Storage Temperature range Tstg 40 to 150 C INSULATION PROPERTIES Isolation Test Voltage, t = 1 sec, 60 Hz Vis 3000 VRMS Creepage Distance 12.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. RECOMMENDED OPERATING CONDITIONS Rating Symbol Min Max Unit Module Operating Junction Temperature T 40 150 C J Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2