FS3L50R07W2H3F B11 EasyPACK Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EasyPACK module with fast Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC J V = 650V CES IC nom = 50A / ICRM = 100A Typische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Motorantriebe Motor drives Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features CoolSiC (TM) Schottky Diode Gen 5 CoolSiC (TM) Schottky diode gen 5 High Speed IGBT H3 High speed IGBT H3 Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features 3 kV AC 1min Isolationsfestigkeit 3 kV AC 1min insulation Al2O3 Substrat mit kleinem thermischen Al2O 3 substrate with low thermal resistance Widerstand Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT contact technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.3 www.infineon.com 2017-03-31FS3L50R07W2H3F B11 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 25C, Tvj max = 175C IC nom 50 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 100 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 50 A, VGE = 15 V Tvj = 25C 1,45 1,80 V Collector-emitter saturation voltage I = 50 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat IC = 50 A, VGE = 15 V Tvj = 150C 1,70 V Gate-Schwellenspannung IC = 0,80 mA, VCE = VGE, Tvj = 25C VGEth 5,00 5,80 6,50 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,50 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 3,10 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,095 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 650 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 50 A, VCE = 300 V Tvj = 25C 0,037 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,037 s GE vj R = 16 T = 150C 0,037 s Gon vj Anstiegszeit, induktive Last IC = 50 A, VCE = 300 V Tvj = 25C 0,042 s t r Rise time, inductive load V = 15 V T = 125C 0,044 s GE vj R = 16 T = 150C 0,047 s Gon vj Abschaltverzgerungszeit, induktive Last I = 50 A, V = 300 V T = 25C 0,255 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,28 s GE vj R = 16 T = 150C 0,28 s Goff vj Fallzeit, induktive Last I = 50 A, V = 300 V T = 25C 0,058 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,064 s GE vj R = 16 T = 150C 0,066 s Goff vj Einschaltverlustenergie pro Puls I = 50 A, V = 300 V, L = 35 nH T = 25C 0,96 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 1100 A/s (T = 150C) T = 125C E 1,20 mJ GE vj vj on R = 16 T = 150C 1,25 mJ Gon vj Abschaltverlustenergie pro Puls I = 50 A, V = 300 V, L = 35 nH T = 25C 1,20 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3600 V/s (T = 150C)T = 125C E 1,60 mJ GE vj vj off R = 16 T = 150C 1,70 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V GE CC I SC SC data V = V -L di/dt t 6 s, T = 150C 330 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 1,40 K/W Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.3 2017-03-31