FZ1400R33HE4 IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Vorlufige Daten / Preliminary Data V = 3300V CES I = 1400A / I = 2800A C nom CRM Potentielle Anwendungen Potential Applications Aktiver Eingang (Rckspeisung) Active frontend (energy recovery) Hochleistungsumrichter High power converters Hybrid-Nutzfahrzeuge Commercial Agriculture Vehicles Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor drives Traktionsumrichter Traction drives USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Groe DC-Festigkeit High DC stability Hohe Kurzschlussrobustheit High short-circuit capability Hohe Stromdichte High current density Niedrige Schaltverluste Low switching losses Niedriges Qg und Cres Low Qg and Cres Niedriges V Low V CEsat CEsat Sehr groe Robustheit Unbeatable robustness T = 150C T = 150C vj op vj op Trench IGBT 4 Trench IGBT 4 V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 600 Package with CTI > 600 Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate RoHS konform RoHS compliant Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com 2019-10-18FZ1400R33HE4 Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Tvj = -40C 3300 V V CES Collector-emitter voltage T = 150C 3300 vj Kollektor-Dauergleichstrom TC = 105C, Tvj max = 150C ICDC 1400 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 2800 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 1400 A Tvj = 25C 2,30 t.b.d. V Collector-emitter saturation voltage V = 15 V T = 125C V 2,80 V GE vj CE sat Tvj = 150C 2,90 V Gate-Schwellenspannung IC = 62,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 / 15 V, V = 1800 V Q 28,0 C GE CE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,75 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 187 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 5,33 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 3300 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 1400 A, VCE = 1800 V Tvj = 25C 0,58 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,70 s GE vj R = 0,8 T = 150C 0,70 s Gon vj Anstiegszeit, induktive Last IC = 1400 A, VCE = 1800 V Tvj = 25C 0,21 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,22 s GE vj R = 0,8 T = 150C 0,23 s Gon vj Abschaltverzgerungszeit, induktive Last I = 1400 A, V = 1800 V T = 25C 2,80 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 3,00 s GE vj R = 2,7 T = 150C 3,10 s Goff vj Fallzeit, induktive Last I = 1400 A, V = 1800 V T = 25C 0,78 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 1,36 s GE vj R = 2,7 T = 150C 1,53 s Goff vj Einschaltverlustenergie pro Puls I = 1400 A, V = 1800 V, L = 85 nH T = 25C 1600 mJ C CE vj Turn-on energy loss per pulse di/dt = 5300 A/s (T = 150C) T = 125C E 2500 mJ vj vj on V = -15 / 15 V, R = 0,8 T = 150C 2800 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 1400 A, V = 1800 V, L = 85 nH T = 25C 1760 mJ C CE vj Turn-off energy loss per pulse du/dt = 2000 V/s (T = 150C) T = 125C E 2320 mJ vj vj off V = -15 / 15 V, R = 2,7 T = 150C 2500 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 2400 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 6400 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 9,30 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 5,60 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 2.0 2019-10-18