Technische Information / Technical Information IGBT-Module FZ800R12KS4 B2 IGBT-modules Hochleistungsmodul mit AlSiC Bodenplatte und schnellem IGBT2 fr hochfrequentes Schalten High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 800 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 1200 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 1600 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150C P 7,60 kW C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 800 A, V = 15 V T = 25C 3,20 3,70 V C GE vj V CE sat Collector-emitter saturation voltage I = 800 A, V = 15 V T = 125C 3,85 V C GE vj Gate-Schwellenspannung IC = 32,0 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V, V = 600V Q 8,40 C GE CE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,56 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 52,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 3,40 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 800 A, VCE = 600 V Tvj = 25C 0,10 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,125 s GE vj RGon = 1,3 Anstiegszeit, induktive Last IC = 800 A, VCE = 600 V Tvj = 25C 0,09 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 1,3 Abschaltverzgerungszeit, induktive Last IC = 800 A, VCE = 600 V Tvj = 25C 0,53 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,59 s GE vj RGoff = 1,3 Fallzeit, induktive Last IC = 800 A, VCE = 600 V Tvj = 25C 0,06 s t f Fall time, inductive load V = 15 V T = 125C 0,07 s GE vj RGoff = 1,3 Einschaltverlustenergie pro Puls IC = 800 A, VCE = 600 V, LS = 60 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 76,0 mJ GE vj on RGon = 1,3 Abschaltverlustenergie pro Puls IC = 800 A, VCE = 600 V, LS = 60 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 58,0 mJ GE vj off RGoff = 1,3 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 6000 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 16,5 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 13,5 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: WB date of publication: 2013-11-25 approved by: PL revision: 3.2 1Technische Information / Technical Information IGBT-Module FZ800R12KS4 B2 IGBT-modules Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 800 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 1600 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 185 kAs R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 800 A, V = 0 V T = 25C 2,00 2,40 V F GE vj VF Forward voltage I = 800 A, V = 0 V T = 125C 1,70 V F GE vj Rckstromspitze I = 800 A, - di /dt = 8200 A/s (T =125C) T = 25C 540 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 900 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 800 A, - di /dt = 8200 A/s (T =125C) T = 25C 60,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 160 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 800 A, - di /dt = 8200 A/s (T =125C) T = 25C 32,0 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 76,0 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 25,0 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 20,0 K/kW Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: WB date of publication: 2013-11-25 approved by: PL revision: 3.2 2