Technische Information / Technical Information IGBT-Modul FF900R12IP4P IGBT-Module PrimePACK2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode PrimePACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit High short-circuit capability Hohe Stostromfestigkeit High surge current capability Hohe Stromdichte High current density Tvj op = 150C Tvj op = 150C V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor RoHS konform RoHS compliant Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: SM date of publication: 2016-09-07 approved by: RN revision: V3.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FF900R12IP4P IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 60C, T = 175C I 900 A H vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 1800 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 900 A, V = 15 V T = 25C 1,70 2,05 V C GE vj Collector-emitter saturation voltage I = 900 A, V = 15 V T = 125C V 2,00 2,40 V C GE vj CE sat IC = 900 A, VGE = 15 V Tvj = 150C 2,10 2,55 V Gate-Schwellenspannung IC = 33,0 mA, VCE = VGE, Tvj = 25C VGEth 5,00 5,80 6,50 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 6,40 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,2 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 54,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,80 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 900 A, VCE = 600 V Tvj = 25C 0,20 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,22 s GE vj RGon = 1,6 Tvj = 150C 0,22 s Anstiegszeit, induktive Last IC = 900 A, VCE = 600 V Tvj = 25C 0,14 s t r Rise time, inductive load V = 15 V T = 125C 0,15 s GE vj RGon = 1,6 Tvj = 150C 0,15 s Abschaltverzgerungszeit, induktive Last IC = 900 A, VCE = 600 V Tvj = 25C 0,70 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,80 s GE vj RGoff = 1,6 Tvj = 150C 0,85 s Fallzeit, induktive Last IC = 900 A, VCE = 600 V Tvj = 25C 0,20 s t f Fall time, inductive load V = 15 V T = 125C 0,40 s GE vj RGoff = 1,6 Tvj = 150C 0,45 s Einschaltverlustenergie pro Puls IC = 900 A, VCE = 600 V, LS = 45 nH Tvj = 25C 71,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 4800 A/s (T = 150C) T = 125C E 100 mJ GE vj vj on RGon = 1,6 Tvj = 150C 105 mJ Abschaltverlustenergie pro Puls IC = 900 A, VCE = 600 V, LS = 45 nH Tvj = 25C 125 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2800 V/s (T = 150C)T = 125C E 160 mJ GE vj vj off RGoff = 1,6 Tvj = 150C 175 mJ Kurzschluverhalten VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 3600 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 48,1 K/kW Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: SM date of publication: 2016-09-07 approved by: RN revision: V3.0 2