DD500S65K3 hochisolierendes Modul high insulated module V = 6500V CES I = 500A / I = 1000A C nom CRM Potentielle Anwendungen Potential Applications Mittelspannungsantriebe Medium voltage converters Traktionsumrichter Traction drives Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Erweiterter Lagertemperaturbereich bis zu T = Extended storage temperature down to T = stg stg -55C -55C Gehuse mit CTI > 600 Package with CTI > 600 Gehuse mit erweiterten Package with enhanced insulation of 10.4kV AC Isolationseigenschaften von 10,4kV AC 10s 10s Groe Luft- und Kriechstrecken High creepage and clearance distances Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.2 www.infineon.com 2018-01-15DD500S65K3 Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung Tvj = 125C 6500 Repetitive peak reverse voltage T = 25C V 6500 V vj RRM T = -50C 5900 vj Dauergleichstrom I 500 A F Continuous DC forward current Periodischer Spitzenstrom tP = 1 ms IFRM 1000 A Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 210 kAs R P vj It - value Spitzenverlustleistung Tvj = 125C PRQM 2000 kW Maximum power dissipation Mindesteinschaltdauer t 10,0 s on min Minimum turn-on time Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 500 A, V = 0 V T = 25C 3,00 3,50 V F GE vj V F Forward voltage IF = 500 A, VGE = 0 V Tvj = 125C 2,95 3,50 V Rckstromspitze IF = 500 A, - diF/dt = 2000 A/s (Tvj=125C) Tvj = 25C 730 A Peak reverse recovery current V = 3600 V T = 125C I 800 A R vj RM VGE = -15 V Sperrverzgerungsladung IF = 500 A, - diF/dt = 2000 A/s (Tvj=125C) Tvj = 25C 570 C Recovered charge V = 3600 V T = 125C Q 1050 C R vj r VGE = -15 V Abschaltenergie pro Puls IF = 500 A, - diF/dt = 2000 A/s (Tvj=125C) Tvj = 25C 930 mJ Reverse recovery energy V = 3600 V T = 125C E 2000 mJ R vj rec VGE = -15 V Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 27,9 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 23,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb Tvj op -50 125 C Temperature under switching conditions Datasheet 2 V 3.2 2018-01-15