NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMS3015SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data High Density UMOS with Schottky Barrier Diode Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. Low Leakage Current at High Temp. UL Flammability Classification Rating 94V-0 High Conversion Efficiency Moisture Sensitivity: Level 1 per J-STD-020 Low On-Resistance Terminal Connections: See Diagram Below Low Input Capacitance Weight: 0.072 grams (Approximate) Fast Switching Speed Utilizes Diodes Incorporateds Monolithic SiMFET Technology to Increase Conversion Efficiency 100% UIS and R Tested g Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SiMFET S D Schottky Integrated MOSFET S D S D G D Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMS3015SSS-13 SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMS3015SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 11 A Continuous Drain Current (Note 5) V = 10V I A GS D State 6.6 T = +85C A Pulsed Drain Current (Note 6) 80 A I DM Avalanche Current (Notes 6 & 7) 17 A I AR Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH 43 mJ E AR Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.55 W P D 81.3 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I - - 0.1 mA V = 30V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 1.5 2.5 V V = V , I = 250A GS(TH) DS GS D - 8.5 11.9 VGS = 10V, ID = 11A Static Drain-Source On-Resistance R m DS(ON) - 9.5 14.9 V = 4.5V, I = 8.8A GS D Forward Transfer Admittance - 18 - S Y V = 5V, I = 10A fs DS D Diode Forward Voltage - 0.45 1 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 1276 - pF C iss V = 15V, V = 0V, DS GS Output Capacitance - 160 - pF C oss f = 1.0MHz - 136 - Reverse Transfer Capacitance C pF rss - 1.48 2.7 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS - 14.3 - Total Gate Charge (V = 4.5V) Q nC V = 15V, V = 4.5V, I = 8.8A GS g DS GS D - 30.6 - Total Gate Charge (V = 10V) Q nC GS g V = 15V, V = 10V, I = 8.8A DS GS D - 3.4 - Gate-Source Charge nC Qgs - 4.3 - Gate-Drain Charge nC Q gd Turn-On Delay Time - 15.8 - ns t D(ON) Turn-On Rise Time - 27.8 - ns t V = 4.5V, V = 15V, R GS DS Turn-Off Delay Time - 29.7 - ns t R = 1.8, I =8.8A D(OFF) G D Turn-Off Fall Time - 13.6 - ns t F Notes: 5. Device mounted on 1in * 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the users specific board design. 6. Repetitive rating, pulse width limited by junction temperature. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMS3015SSS August 2018 Diodes Incorporated www.diodes.com Document number: DS32096 Rev. 5 - 3