X-On Electronics has gained recognition as a prominent supplier of NX1029X,115 MOSFET across the USA, India, Europe, Australia, and various other global locations. NX1029X,115 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NX1029X,115 Nexperia

NX1029X,115 electronic component of Nexperia
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See Product Specifications
Part No.NX1029X,115
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET 60/50V, 330/170 mA N/P-ch Trench MOSFET
Datasheet: NX1029X,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0767 ea
Line Total: USD 306.8

Availability - 3880
Ship by Tue. 06 Aug to Mon. 12 Aug
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
3880
Ship by Tue. 06 Aug to Mon. 12 Aug
MOQ : 4000
Multiples : 4000
4000 : USD 0.0767
12000 : USD 0.0767
16000 : USD 0.0767
40000 : USD 0.0767
60000 : USD 0.0767

17
Ship by Tue. 13 Aug to Fri. 16 Aug
MOQ : 1
Multiples : 1
1 : USD 0.3795
10 : USD 0.3061
30 : USD 0.2744
100 : USD 0.2351
500 : USD 0.218
1000 : USD 0.2075

7760
Ship by Tue. 06 Aug to Mon. 12 Aug
MOQ : 4000
Multiples : 4000
4000 : USD 0.1054
8000 : USD 0.0915
24000 : USD 0.0777

7760
Ship by Tue. 06 Aug to Mon. 12 Aug
MOQ : 4000
Multiples : 4000
4000 : USD 0.0984
8000 : USD 0.0853
24000 : USD 0.0782

11640
Ship by Tue. 06 Aug to Mon. 12 Aug
MOQ : 4000
Multiples : 4000
4000 : USD 0.1002
8000 : USD 0.0868
24000 : USD 0.0787

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Product
Transistor Type
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the NX1029X,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NX1029X,115 and other electronic components in the MOSFET category and beyond.

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NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 2 kV (N-channel) and 1 kV (P-channel) Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Level shifter Load switch Power supply converter Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T =25C - - -50 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =-10 V T =25C - - -170 mA D GS amb TR1 (N-channel) V drain-source voltage T =25C - - 60 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V T =25C - - 330 mA D GS amb TR1 (N-channel), Static characteristics R drain-source on-state V =10V I =500 mA -1 1.6 DSon GS D resistance pulsed t 300 s p 0.01 T =25C j TR2 (P-channel), Static characteristics R drain-source on-state V =-10 V I =-100mA -4.5 7.5 DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .NX1029X Nexperia 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 4 D1 D2 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 5 G2 gate TR2 12 3 6D1 drain TR1 SOT666 (SOT666) S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX1029X SOT666 plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes 1 Type number Marking code NX1029X AD 1 % = placeholder for manufacturing site code. NX1029X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 12 August 2011 2 of 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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