A Product Line of Diodes Incorporated Green DMP4051LK3 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production I D V R Low on-resistance (BR)DSS DS(on) T = 25C A Fast switching speed 51m V = -10V -10.5A GS Green component and RoHS compliant (Note 1) -40V Qualified to AEC-Q101 Standards for High Reliability 85m V = -4.5V -8.4A GS Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: TO252 (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic, Green Molding Compound. UL ideal for high efficiency power management applications. Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals: Matte Tin Finish annealed over Copper leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power management functions Weight: 0.33 grams (approximate) D D TO252 G D S GS Equivalent Circuit Top View Top View Pin-Out Ordering Information (Notes 1 & 2) Product Grade Marking Reel size (inches) Tape width (mm) Quantity per reel DMP4051LK3-13 Commercial P4051L 13 16 2,500 DMP4051LK3Q-13 Automotive P4051L 13 16 2,500 Notes: 1. Diodes, Inc. defines Green products as those which are RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. 2. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified. Marking Information = Manufacturers Marking P4051L = Product Type Marking Code YYWW YYWW = Date Code Marking P4051L YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 9 February 2012 DMP4051LK3 Diodes Incorporated www.diodes.com Document Number DS32114 Rev. 3 - 2 A Product Line of Diodes Incorporated DMP4051LK3 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage -40 V V DSS Gate-Source voltage (Note 3) V V 20 GS Single Pulsed Avalanche Energy (Note 9) E 50 mJ AS Single Pulsed Avalanche Current (Note 9) I 20.3 A AS (Note 5) -10.5 Continuous Drain current V = 10V T = 70C (Note 5) I -8.40 A GS A D (Note 4) -7.2 Pulsed Drain current V = 10V (Note 6) I -28.9 A GS DM Continuous Source current (Body diode) (Note 5) I -10.1 A S Pulsed Source current (Body diode) (Note 5) I -28.9 A SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 4.18 (Note 4) 33.4 Power dissipation 8.9 W (Note 5) P D Linear derating factor 71.4 mW/C 2.14 (Note 7) 17.1 (Note 4) 29.9 Thermal Resistance, Junction to Ambient (Note 5) 14.0 R JA C/W (Note 7) 58.4 Thermal Resistance, Junction to Lead (Note 8) 2.46 R JL Operating and storage temperature range T , T -55 to 150 C J STG Notes: 3. AEC-Q101 V maximum is 16V. GS 4. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 5. Same as note 4, except the device is measured at t 10 sec. 6. Same as note 4, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 9. UIS in production with L = 100H, V = -40V. DD 2 of 9 February 2012 DMP4051LK3 Diodes Incorporated www.diodes.com Document Number DS32114 Rev. 3 - 2