DMP6110SSS 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low On-Resistance D V R max (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage Low Input Capacitance 110m V = -10V -4.5A GS -60V Fast Switching Speed 130m V = -4.5V -4.2A GS Low Input/ Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3 ) This MOSFET has been designed to minimize the on-state Qualified to AEC-Q101 standards for High Reliability resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SO-8 Backlighting Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.072g (approximate) D SO-8 S D Pin1 D S G S D D G S Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP6110SSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP6110SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS T = +25C -4.5 A Drain Current (Note 6) V = -10V t < 10s I A GS D -3.6 T = +70C A Maximum Body Diode Forward Current (Note 6) -2.1 A I S -19 A Pulsed Drain Current (10s pulse, duty cycle = 1%) I DM Avalanche Current (Notes 7) L = 0.1mH -17.6 A I AS Avalanche Energy (Notes 7) L = 0.1mH 15.4 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.5 W D Steady State 80 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 48 C/W Total Power Dissipation (Note 6) P 2.0 W D Steady State 61 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 37 C/W Thermal Resistance, Junction to Case R 6.4 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMinTypMaxUnit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(th) DS GS D 86 110 V = -10V, I = -4.5A GS D Static Drain-Source On-Resistance R m DS (ON) 98 130 V = -4.5V, I =-3.5A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1030 C iss Output Capacitance 49.1 pF C V = -30V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 38.7 C rss Gate Resistance 13.6 R V = 0V, V = 0V, f = 1.0MHz G DS GS 9.5 Total Gate Charge (V = -4.5V) Q GS g 19.4 Total Gate Charge (V = -10V) Q GS g nC V = -30V, I = -5A DS D 2.3 Gate-Source Charge Q gs 3.6 Gate-Drain Charge Q gd 3.7 Turn-On Delay Time t D(on) 6.3 Turn-On Rise Time t r V = -10V, V = -30V, R = 6, GS DS GEN ns Turn-Off Delay Time 58.7 I = -5A t D D(off) Turn-Off Fall Time 26.1 t f Body Diode Reverse Recovery Time 14.85 ns t I = -5A, dI/dt = 100A/s rr S Body Diode Reverse Recovery Charge 8.8 nC Q I = -5A, dI/dt = 100A/s rr S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 0.1mH, starting T = +25C. A 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 June 2014 DMP6110SSS Diodes Incorporated www.diodes.com Document number: DS37217 Rev. 1 - 2 NEW PRODUCT NEW PRODUCT