NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMS3016SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET Utilizes a Unique Patented Process to Monolithically Case: SO-8 Integrate a MOSFET and a Schottky in a Single Die to Deliver: Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low R - Minimizes Conduction Losses DS(ON) Moisture Sensitivity: Level 1 per J-STD-020 Low V - Reducing the Losses Due to Body Diode SD Conduction Terminal Connections: See Diagram Below Low Q - Lower Q of the Integrated Schottky Reduces Weight: 0.072 grams (Approximate) rr rr Body Diode Switching Losses Low Gate Capacitance (Q /Q ) Ratio Reduces Risk of g gs Shoot-Through or Cross Conduction Currents at High Frequencies Avalanche Rugged I and E Rated AR AR Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability S D S D S D G D Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMS3016SSS-13 SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN - DMS3016SSS NO ALTERNATE PART Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage 12 V V GSS Steady T = +25C 9.8 A Continuous Drain Current (Note 5) V = 4.5V I A GS D State 6.3 T = +85C A Pulsed Drain Current (Note 6) I 90 A DM Avalanche Current (Note 6) (Note 7) I 13 A AR Repetitive Avalanche Energy (Note 6) (Note 7) L = 0.3mH 25.4 mJ EAR Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.54 W P D 81 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I - - 0.1 mA V = 30V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 - 2.3 V V = V , I = 250A GS(TH) DS GS D - 9 13 VGS = 10V, ID = 9.8A Static Drain-Source On-Resistance R m DS(ON) - 11 16 V = 4.5V, I = 9.8A GS D Forward Transfer Admittance - 5 - S Y V = 5V, I = 9.8A fs DS D Diode Forward Voltage - 0.4 1 V V V = 0V, I = 1A SD GS S Maximum Body-Diode + Schottky Continuous Current - - 5 A - I S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 1849 - pF C iss VDS =15V, VGS = 0V, Output Capacitance C - 158 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 123 - pF rss Gate Resistance R 0.53 2.68 4.82 V =0V, V = 0V, f = 1MHz g DS GS Total Gate Charge V = 4.5V Q - 18.5 - nC GS g Total Gate Charge V = 10V Q - 43 - nC GS g V = 15V, V = 10V, DS GS Gate-Source Charge - 4.7 - nC I = 9.8A Qgs D Gate-Drain Charge - 4.0 - nC Q gd Turn-On Delay Time - 6.62 - ns t D(ON) Turn-On Rise Time - 8.73 - ns t V = 10V, V = 10V, r GS DS Turn-Off Delay Time - 36.41 - ns t R = 3, R = 1.2 D(OFF) g L Turn-Off Fall Time t - 4.69 - ns f Notes: 5. Device mounted on minimum recommended layout. The value in any given application depends on the users specific board design. 6. Repetitive rating, pulse width limited by junction temperature. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 August 2018 DMS3016SSS www.diodes.com Diodes Incorporated Document number: DS32266 Rev. 4 - 3