X-On Electronics has gained recognition as a prominent supplier of NVTR4503NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVTR4503NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVTR4503NT1G ON Semiconductor

NVTR4503NT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NVTR4503NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SOT23 30V 2A 0.110R
Datasheet: NVTR4503NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.377 ea
Line Total: USD 0.38 
Availability - 19
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.377
10 : USD 0.0822

897
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.504
5 : USD 0.3556
10 : USD 0.3052
50 : USD 0.2156
100 : USD 0.1876

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVTR4503NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVTR4503NT1G and other electronic components in the MOSFETs category and beyond.

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NTR4503N, NVTR4503N MOSFET Power, Single, N-Channel, SOT-23 30 V, 2.5 A Features www.onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive V R TYP I MAX (BR)DSS DS(on) D SOT23 Surface Mount for Small Footprint (3 x 3 mm) 85 m 10 V NV Prefix for Automotive and Other Applications Requiring Unique 30 V 2.5 A Site and Control Change Requirements AECQ101 Qualified and 105 m 4.5 V PPAP Capable These Devices are PbFree and are RoHS Compliant NChannel Applications D DCDC Conversion Load/Power Switch for Portables Load/Power Switch for Computing G MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit S DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS MARKING DIAGRAM/ Continuous Drain Steady T = 25C I 2.0 A A D PIN ASSIGNMENT Current (Note 1) State 3 T = 85C 1.5 A 3 Drain t 10 s T = 25C 2.5 A 1 Power Dissipation Steady T = 25C P 0.73 W A D 2 (Note 1) State TR3 M SOT23 Continuous Drain Steady T = 25C I 1.5 A A D Current (Note 2) State CASE 318 T = 85C 1.1 A STYLE 21 1 2 Gate Source Power Dissipation T = 25C P 0.42 W A D (Note 2) TR3 = Specific Device Code Pulsed Drain Current t =10 s I 10 A p DM M = Date Code = PbFree Package Operating Junction and Storage Temperature T , 55 to C J 150 T stg (Note: Microdot may be in either location) Source Current (Body Diode) I 2.0 A S Peak Source Current t =10 s I 4.0 A p SM ORDERING INFORMATION (Diode Forward) Lead Temperature for Soldering Purposes T 260 C Device Package Shipping L (1/8 from case for 10 s) NTR4503NT1G SOT23 3000 / Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NVTR4503NT1G SOT23 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: June, 2019 Rev. 8 NTR4503N/DNTR4503N, NVTR4503N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 170 C/W JA JunctiontoAmbient t < 10 s (Note 1) R 100 JA JunctiontoAmbient Steady State (Note 2) R 300 JA 1. Surfacemounted on FR4 board using 1 in sq pad size. 2. Surfacemounted on FR4 board using the minimum recommended pad size. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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