NX3008CBKS,115 Nexperia

NX3008CBKS 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ESD protection up to 2 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Level shifter Load switch Power supply converter Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T=25C ---30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---200mA D GS amb TR1 (N-channel) V drain-source voltage T=25C --30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C - - 350 mA D GS amb TR1 (N-channel), Static characteristics R drain-source on-state V =4.5 V I =350 mA -1 1.4 DSon GS D resistance T =25C j TR2 (P-channel), Static characteristics R drain-source on-state V =-4.5V -2.8 4.1 DSon GS resistance I = -200 mA T =25C D j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .NX3008CBKS Nexperia 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 D1 D2 4 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 132 5 G2 gate TR2 SOT363 (SC-88) 6D1 drain TR1 S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008CBKS SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008CBKS LD% 1 % = placeholder for manufacturing site code. NX3008CBKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 29 July 2011 2 of 21