X-On Electronics has gained recognition as a prominent supplier of NX3020NAKS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NX3020NAKS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NX3020NAKS,115 Nexperia

NX3020NAKS,115 electronic component of Nexperia
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Part No.NX3020NAKS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET NX3020NAKS/SC-88/REEL7
Datasheet: NX3020NAKS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0418 ea
Line Total: USD 125.4 
Availability - 14550
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
7743
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2119
Multiples : 1
2119 : USD 0.0614
3000 : USD 0.0545
6000 : USD 0.0475

14550
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0432

5820
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0483
9000 : USD 0.047
15000 : USD 0.0465
45000 : USD 0.0454
75000 : USD 0.0443

37350
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2233
10 : USD 0.1474
100 : USD 0.0737
1000 : USD 0.0693
3000 : USD 0.0495
9000 : USD 0.0451
24000 : USD 0.0451
45000 : USD 0.0451
99000 : USD 0.044

960
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.294
10 : USD 0.1988
100 : USD 0.1022
209 : USD 0.0826
574 : USD 0.0784

14550
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0418

11640
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0565
6000 : USD 0.0462

7743
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 2119
Multiples : 1
2119 : USD 0.0594

46560
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 9037
Multiples : 1
9037 : USD 0.0522

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NX3020NAKS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NX3020NAKS,115 and other electronic components in the MOSFETs category and beyond.

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NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 4.5 V T = 25 C 1 - - 180 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 100 mA T = 25 C - 2.7 4.5 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 6 5 4 2 G1 gate TR1 G1 3 D2 drain TR2 G2 1 2 3 4 S2 source TR2 TSSOP6 (SOT363) 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3020NAKS TSSOP6 plastic surface-mounted package 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code 1 NX3020NAKS Ua% 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V = 4.5 V T = 25 C 1 - 180 mA D GS amb V = 4.5 V T = 100 C 1 - 110 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 720 mA DM amb p P total power dissipation T = 25 C 2 - 260 mW tot amb 1 - 280 mW NX3020NAKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 November 2013 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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