NX3020NAKW Nexperia

NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 180 mA D GS amb Static characteristics R drain-source on-state V = 10 V I = 100 mA T = 25 C - 2.7 4.5 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product SOT 323NXP Semiconductors NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source 3 D drain G 1 2 SC-70 (SOT323) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3020NAKW SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 NX3020NAKW %3A 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C 1 - 180 mA D GS amb V = 10 V T = 100 C 1 - 110 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 720 mA DM amb p P total power dissipation T = 25 C 2 - 260 mW tot amb 1 - 300 mW NX3020NAKW All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 29 October 2013 2 / 15