X-On Electronics has gained recognition as a prominent supplier of NX3020NAKW,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NX3020NAKW,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NX3020NAKW,115 Nexperia

NX3020NAKW,115 electronic component of Nexperia
NX3020NAKW,115 Nexperia
NX3020NAKW,115 MOSFETs
NX3020NAKW,115  Semiconductors

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See Product Specifications
Part No. NX3020NAKW,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 180mA (Ta) 260mW (Ta), 1.1W (Tc) Surface Mount SOT-323
Datasheet: NX3020NAKW,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2325 ea
Line Total: USD 0.23 
Availability - 49093
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2192
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 10
Multiples : 10
10 : USD 0.0957
100 : USD 0.0767
300 : USD 0.0575
3000 : USD 0.0462
6000 : USD 0.0417
9000 : USD 0.0395

49093
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2325
10 : USD 0.1413
100 : USD 0.0575
1000 : USD 0.0473
3000 : USD 0.0264
9000 : USD 0.0253

53799
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 775
Multiples : 1
775 : USD 0.0839
909 : USD 0.0715
1000 : USD 0.0712
2000 : USD 0.0668
6000 : USD 0.03
24000 : USD 0.0281

5820
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0306
9000 : USD 0.0268

43650
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 33000
Multiples : 3000
33000 : USD 0.0369

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
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We are delighted to provide the NX3020NAKW,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NX3020NAKW,115 and other electronic components in the MOSFETs category and beyond.

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NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 180 mA D GS amb Static characteristics R drain-source on-state V = 10 V I = 100 mA T = 25 C - 2.7 4.5 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source 3 D drain G 1 2 SC-70 (SOT323) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3020NAKW SC-70 plastic surface-mounted package 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code 1 NX3020NAKW %3A 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C 1 - 180 mA D GS amb V = 10 V T = 100 C 1 - 110 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 720 mA DM amb p P total power dissipation T = 25 C 2 - 260 mW tot amb 1 - 300 mW NX3020NAKW All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 29 October 2013 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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