NX7002AKS,115 Nexperia

NX7002AKS 60 V, dual N-channel Trench MOSFET Rev. 1 1 March 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection Trench MOSFET technology 1.3 Applications Relay driver Low-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C --60 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V T =25C - - 170 mA D GS amb Static characteristics R drain-source on-state V =10V I =100 mA T =25C - 3 4.5 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .NX7002AKS Nexperia 60 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 D1 D2 4 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 132 5 G2 gate TR2 SOT363 (TSSOP6) 6D1 drain TR1 S1 S2 017aaa256 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX7002AKS TSSOP6 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code NX7002AKS TD% 1 % = placeholder for manufacturing site code NX7002AKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 1 March 2012 2 of 15