X-On Electronics has gained recognition as a prominent supplier of NX3020NAKV,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NX3020NAKV,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NX3020NAKV,115 Nexperia

NX3020NAKV,115 electronic component of Nexperia
NX3020NAKV,115 Nexperia
NX3020NAKV,115 MOSFETs
NX3020NAKV,115  Semiconductors

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See Product Specifications
Part No. NX3020NAKV,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET NX3020NAKV/SOT6/REEL7
Datasheet: NX3020NAKV,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
950: USD 0.1369 ea
Line Total: USD 130.06 
Availability - 14550
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 950  Multiples: 1
Pack Size: 1
Availability Price Quantity
14550
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 950
Multiples : 1
950 : USD 0.1369
1000 : USD 0.0953
3000 : USD 0.0927
6000 : USD 0.0745
15000 : USD 0.06

1439
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.448
10 : USD 0.35
25 : USD 0.2716
100 : USD 0.175
174 : USD 0.0994

14550
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 950
Multiples : 1
950 : USD 0.1369

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NX3020NAKV,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NX3020NAKV,115 and other electronic components in the MOSFETs category and beyond.

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NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 4.5 V T = 25 C 1 - - 200 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 100 mA T = 25 C - 2.7 4.5 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .Nexperia NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 6 5 4 2 G1 gate TR1 G1 3 D2 drain TR2 G2 4 S2 source TR2 1 2 3 5 G2 gate TR2 SOT666 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3020NAKV SOT666 plastic surface-mounted package 6 leads SOT666 7. Marking Table 4. Marking codes Type number Marking code NX3020NAKV GB 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V = 4.5 V T = 25 C 1 - 200 mA D GS amb V = 4.5 V T = 100 C 1 - 120 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 800 mA DM amb p P total power dissipation T = 25 C 2 - 260 mW tot amb 1 - 370 mW T = 25 C - 1100 mW sp NX3020NAKV All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 29 October 2013 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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