IPI029N06NAKSA1 Infineon

IPI029N06N MOSFET TM I-PAK OptiMOS Power-Transistor, 60 V Features tab Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 1) Qualified according to JEDEC for target applications 1 Pb-free lead plating RoHS compliant 2 3 Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Drain Parameter Value Unit Pin 2, Tab V 60 V DS Gate R 2.9 m DS(on),max Pin 1 I 136 A D Source Pin 3 Q 65 nC oss Q g(0V..10V) 56 nC Type / Ordering Code Package Marking Related Links IPI029N06N PG-TO 262-3 029N06N - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.5, 2017-09-27TM OptiMOS Power-Transistor , 60 V IPI029N06N Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 11 Trademarks . 11 Disclaimer 11 Final Data Sheet 2 Rev. 2.5, 2017-09-27