Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 8.1 m DS(on),max (SMD) Optimized technology for DC/DC converters I 50 A D Excellent gate charge x R product (FOM) DS(on) N-channel, logic level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G PacPackkageage PGPG--TTOO263-263-33 PGPG--TTOO220-220-33 PGPG--TTOO262-262-33 Marking 081N06L 084N06L 084N06L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 2) I Continuous drain current T =25 C 50 A D C T =100 C 50 C 3) I T =25 C 200 Pulsed drain current D,pulse C 4) E I =50 A, R =25 43 mJ Avalanche energy, single pulse AS D GS V Gate source voltage 20 V GS Power dissipation P T =25 C 79 W tot C Operating and storage temperature T , T -55 ... 175 C j stg 1) J-STD20 and JESD22 2) Current is limited by bondwire with an R =1.9 K/W the chip is able to carry 73 A. thJC 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.24Rev. 2.24 page 1page 1 2012-11-282012-11-28IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.9 K/W thJC R Thermal resistance, minimal footprint - - 62 thJA 5) junction - ambient -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =34 A Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =60 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =60 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS R V =10 V, I =50 A Drain-source on-state resistance - 7.0 8.4 m DS(on) GS D V =4.5 V, I =25 A - 9.7 14.3 GS D V =10 V, I =50 A, GS D Drain-source on-state resistance R - 6.7 8.1 DS(on) (SMD) V =4.5 V, I =25 A, GS D - 9.4 14 (SMD) Gate resistance R - 0.9 - G V >2 I R , DS D DS(on)max g Transconductance 35 69 - S fs I =50 A D 5) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.24Rev. 2.24 page 2page 2 2012-11-282012-11-28