NX2301P,215 Nexperia

NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V R rated for Low Voltage Gate Drive DSon Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25 C- - 20 V DS amb V gate-source voltage T =25 C- - 8V GS amb 1 I drain current T =25 C -- 2A D amb V = 4.5 V GS 2 drain-source on-state T =25 C - 100 120 m R DSon j resistance V = 4.5 V GS I = 1A D 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm , t 5s. 2 Pulse test: t 300 s 0.01. pNX2301P Nexperia 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX2301P TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code NX2301P MG* 1 * = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25 C- 20 V DS amb V gate-source voltage T =25 C- 8V GS amb 1 I drain current V = 4.5 V D GS T =25 C- 2A amb T =100 C- 1.2 A amb I peak drain current T =25 C - 6A DM amb single pulse t 10 s p NX2301P All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 26 October 2010 2 of 16