DMN2015UFDF-7 Diodes Incorporated

DMN2015UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications I D max 2 BV R DSS DS(ON) max PCB Footprint of 4mm T = +25C A Low Gate Threshold Voltage 9m V = 4.5V 15.2A GS Low On-Resistance 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 15m V = 2.5V GS 13.8A Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change Description control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), This new generation MOSFET is designed to minimize the on-state please contact us or your local Diodes representative. resistance (R ) and yet maintain superior switching performance, DS(ON) DMN2015UFDF Marking Information Site 1 5N = Product Type Marking Code YM = Date Code Marking N4 5N Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2016 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code D H I J K L M N O P R Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2 5N = Product Type Marking Code YWX = Date Code Marking 5N Y = Year (ex: 0 = 2020) W = Week (ex: a = week 27 z represents week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year 2016 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 6 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 8 January 2020 DMN2015UFDF www.diodes.com Diodes Incorporated Datasheet number: DS37830 Rev. 4 - 2 YWX YM