DMT2005UDV DUAL 24V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UXC) Product Summary Features Low On-Resistance I D BV R DSS DS(ON) max Low Input Capacitance T = +25C A Fast Switching Speed 7m V = 10V GS 50 Low Input/Output Leakage 8m V = 4.5V 47 GS 24V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 10m V = 3.7V 42 GS Halogen and Antimony Free. Green Device (Note 3) 12m V = 2.5V 38 GS Mechanical Data Description Case: PowerDI 3333-8 (Type UXC) This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound. UL resistance (R ) and yet maintain superior switching performance, DS(ON) Flammability Classification Rating 94V-0 making it ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Applications Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.072 grams (Approximate) Analog Switch PowerDI3333-8 (Type UXC) D1 D1 D2 D1 D2 D2 G2 G1 S1 G1 S2 G2 PIN1 Gate Protection Gate Protection S1 S2 Diode Diode Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT2005UDV-7 PowerDI3333-8 (Type UXC) 2,000/Tape & Reel DMT2005UDV-13 PowerDI3333-8 (Type UXC) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT2005UDV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 24 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 50 C Continuous Drain Current (Note 7) V = 10V I A GS D State 40 T = +70C C Maximum Body Diode Forward Current (Note 7) 30 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 70 A I DM Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 70 A I SM Avalanche Current (Note 8) L = 0.1mH 26 A I AS Avalanche Energy (Note 8) L = 0.1mH E 34 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.9 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State R 141 C/W JA Total Power Dissipation (Note 6) 1.9 W TA = +25C PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 66 C/W R JA Thermal Resistance, Junction to Case (Note 7) 4.8 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 24 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current (T = +25C) I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 0.5 1.5 V V V = V , I = 250A GS(TH) DS GS D 5.9 7.0 V = 10V, I = 14A GS D 6.3 8.0 V = 4.5V, I = 14A GS D Static Drain-Source On-Resistance m R DS(ON) 6.7 10.0 V = 3.7V, I = 14A GS D 8.9 12.0 V = 2.5V, I = 13A GS D 0.7 Diode Forward Voltage V 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 2,060 iss V = 10V, V = 0V, DS GS 547 Output Capacitance pF C oss f = 1.0MHz Reverse Transfer Capacitance 517 C rss Gate Resistance 1.6 R V = 0V, V = 0V, f = 1.0MHz G DS GS 24.8 Total Gate Charge (V = 4.5V) Q GS g 46.7 Total Gate Charge (V = 10V) Q GS g nC V = 10V, I = 5A DD D 3 Gate-Source Charge Q gs 9.6 Gate-Drain Charge Q gd 3.7 Turn-On Delay Time t D(ON) 7.2 Turn-On Rise Time t R V = 10V, V = 10V, DD GS ns 37.5 Turn-Off Delay Time t R = 3, I = 5A D(OFF) G D 23.3 Turn-Off Fall Time t F Reverse Recovery Time 19.9 ns t RR I = 5A, di/dt = 100A/s F Reverse Recovery Charge 9.0 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMT2005UDV March 2018 Diodes Incorporated www.diodes.com Document number: DS39727 Rev. 2 - 2