Green ZVN4424G SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Product Summary Features and Benefits Max I D 240 Volt BVDS BV Max R DSS DS(ON) T = +25C A Extremely Low R =4.3 DS(ON) 240V 500mA 5.5 V = 10V GS Low Threshold and Fast Switching Lead-Free Finish RoHS Compliant (Notes 1& 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: SOT223 Case Material: Molded Plastic, Green Molding Compound Earth Recall and Dialing Switches UL Flammability Classification Rating 94V-0 Electronic Hook Switches Moisture Sensitivity: Level 1 per J-STD-020 Battery Powered Equipment Terminals Connections: See Diagram Below Telecoms and High Voltage DC-DC Convertors Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) SOT223 (Type DN) D G S Top View Pin Out Top-View Equivalent Circuit Ordering Information (Note 5) Part Number Compliance Case Packaging ZVN4424GTA Standard SOT223 (Type DN) 1,000 ZVN4424GQTA Automotive SOT223 (Type DN) 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See ZVN4424G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 240 V DSS Gate-Source Voltage V 40 V GS Continuous Drain Current I 500 mA D Pulsed Drain Current I 1.5 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.5 W Power Dissipation at T = +25C P A TOT Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage 240 V BV I = 1mA, V = 0V DSS D GS 10 V = 240V, V = 0V DS GS Zero Gate Voltage Drain Current I A DSS 100 V = 190V, V = 0V, T = +125C DS GS A Gate-Body Leakage I 100 nA V = 40V, V = 0V GSS GS DS Gate-Source Threshold Voltage V 0.8 1.3 1.8 V I = 1mA, V = V GS(TH) D DS GS ON CHARACTERISTICS On-State Drain Current (Note 6) I 0.8 1.4 A V = 10V, V = 10V D(ON) DS GS 4 5.5 V = 10V, I = 500mA GS D Static Drain-Source On-State Resistance (Note 6) R DS(ON) 4.3 6 VGS = 2.5V, ID = 500mA Forward Transconductance (Notes 6 & 7) 0.4 0.75 S g V = 10V, I = 0.5A fs DS D DYNAMIC CHARACTERISTICS Input Capacitance (Note 7) 110 200 pF C iss V = 25V, V = 0V DS GS Output Capacitance (Note 7) 15 25 pF C oss f = 1MHz Reverse Transfer Capacitance (Note 7) 3.5 15 pF C rss Turn-On Delay Time (Notes 7 & 8) 2.5 5 ns t D(ON) Turn-On Rise Time (Notes 7 & 8) t 5 8 ns V = 50V, V = 10V R DD GEN Turn-Off Delay Time (Notes 7 & 8) t 40 60 ns I = 0.25A D(OFF) D Turn-Off Fall Time (Notes 7 & 8) t 16 25 ns F Notes: 6. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 7. Sample test. 8. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. 2 of 6 ZVN4424G October 2018 Diodes Incorporated www.diodes.com Datasheet Number: DS33378 Rev. 7 - 2 NEW PRODUCT