DMN67D7L 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 5 V = 10V 60V GS 210mA Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. Motor Control UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.009 grams (Approximate) D SOT23 D G S G S Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMN67D7L-7 SOT23 3,000/Tape & Reel DMN67D7L-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN67D7L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 40 V GSS Steady T = +25C 210 A Continuous Drain Current (Note 6) V = 10V I mA GS D State 150 T = +85C A Maximum Body Diode Forward Current (Note 6) 500 mA I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 800 mA I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 340 mW P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 376 C/W R JA Total Power Dissipation (Note 6) 570 mW P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 224 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.8 2.5 V V V = V , I = 250A GS(TH) DS GS D 3.2 7.5 V = 5.0V, I = 0.05A GS D Static Drain-Source On-Resistance R DS(ON) 1.5 5.0 V = 10V, I = 0.5A GS D Diode Forward Voltage 0.78 1.5 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 22 pF C iss V = 25V, V = 0V, DS GS Output Capacitance C 4.1 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.5 pF rss Gate Resistance R 120 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = 4.5V) Q 361 GS g 821 Total Gate Charge (VGS = 10V) Qg pC V = 10V, I = 250mA DS D Gate-Source Charge 162 Q gs Gate-Drain Charge 116 Q gd Turn-On Delay Time 2.8 t D(ON) V = 30V, I = 0.2A, DD D Turn-On Rise Time 3.0 t R ns R = 150, V = 10V, L GEN Turn-Off Delay Time t 7.6 D(OFF) R = 25 GEN Turn-Off Fall Time t 5.6 F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN67D7L October 2017 Diodes Incorporated www.diodes.com Document number: DS39026 Rev. 2 - 2