NTJD4001N, NVTJD4001N MOSFET Dual, N-Channel, Small Signal, SC-88 30 V, 250 mA Features www.onsemi.com Low Gate Charge for Fast Switching Small Footprint 30% Smaller than TSOP6 V R TYP I Max ESD Protected Gate (BR)DSS DS(on) D AEC Q101 Qualified NVTJD4001N 1.0 4.0 V 250 mA 30 V These Devices are PbFree and are RoHS Compliant 1.5 2.5 V Applications Low Side Load Switch SOT363 LiIon Battery Supplied Devices Cell Phones, PDAs, DSC SC88 (6 LEADS) Buck Converters Level Shifts S 1 6 D 1 1 MAXIMUM RATINGS (T = 25C unless otherwise stated) J G 2 5 G 1 2 Parameter Symbol Value Units DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V D 3 4 S GS 2 2 Continuous Drain Steady T = 25 C I 250 mA A D Current (Note 1) State Top View T = 85 C 180 A Power Dissipation Steady T = 25 C P 272 mW A D MARKING DIAGRAM & (Note 1) State PIN ASSIGNMENT Pulsed Drain Current t =10 s I 600 mA DM D1 G2 S2 Operating Junction and Storage Temperature T , T 55 to 6 J STG C 150 1 TE M SOT363 Source Current (Body Diode) I 250 mA S CASE 419B Lead Temperature for Soldering Purposes 260 C T STYLE 26 L 1 (1/8 from case for 10 s) S1 G1 D2 THERMAL RESISTANCE RATINGS (Note 1) TE = Device Code Parameter Symbol Value Unit M = Date Code = PbFree Package JunctiontoAmbient Steady State R 458 C/W JA (Note: Microdot may be in either location) JunctiontoLead Steady State R 252 JL Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping 1. Surface mounted on FR4 board using min pad size (Cu area = 0.155 in sq 1 oz including traces). NTJD4001NT1G SOT363 3000 / Tape & (PbFree) Reel NVTJD4001NT1G SOT363 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 7 NTJD4001N/DNTJD4001N, NVTJD4001N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 100 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 56 mV/ C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, V = 30 V 1.0 A DSS GS DS GatetoSource Leakage Current I V = 0 V, V = 10 V 1.0 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 100 A 0.8 1.2 1.5 V GS(TH) GS DS D Gate Threshold Temperature V /T 3.2 mV/ C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.0 V, I = 10 mA 1.0 1.5 DS(on) GS D V = 2.5 V, I = 10 mA 1.5 2.5 GS D Forward Transconductance g V = 3.0 V, I = 10 mA 80 mS FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 20 33 pF GS ISS V = 5.0 V DS Output Capacitance C 19 32 OSS Reverse Transfer Capacitance C 7.25 12 RSS Total Gate Charge Q V = 5.0 V, V = 24 V, 0.9 1.3 nC G(TOT) GS DS I = 0.1 A D Threshold Gate Charge Q 0.2 G(TH) GatetoSource Charge Q 0.3 GS GatetoDrain Charge Q 0.2 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time td V = 4.5 V, V = 5.0 V, 17 ns (ON) GS DD I = 10 mA, R = 50 D G Rise Time tr 23 TurnOff Delay Time td 94 (OFF) Fall Time tf 82 DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V T = 25C 0.65 0.7 SD GS J I = 10 mA S T = 125C 0.45 J Reverse Recovery Time t V = 0 V, dI /dt = 8.0 A/ s, 12.4 ns RR GS S I = 10 mA S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2