X-On Electronics has gained recognition as a prominent supplier of NVTJD4001NT2G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVTJD4001NT2G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVTJD4001NT2G ON Semiconductor

NVTJD4001NT2G electronic component of ON Semiconductor
NVTJD4001NT2G ON Semiconductor
NVTJD4001NT2G MOSFETs
NVTJD4001NT2G  Semiconductors

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See Product Specifications
Part No. NVTJD4001NT2G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET 30V 250MA 1.5OH
Datasheet: NVTJD4001NT2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0

Multiples : 6000
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.3286
10 : USD 0.517
100 : USD 0.1905
500 : USD 0.1685
1000 : USD 0.1313
3000 : USD 0.1163
6000 : USD 0.1143
9000 : USD 0.1013
24000 : USD 0.0913
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the NVTJD4001NT2G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVTJD4001NT2G and other electronic components in the MOSFETs category and beyond.

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NTJD4001N, NVTJD4001N MOSFET Dual, N-Channel, Small Signal, SC-88 30 V, 250 mA Features www.onsemi.com Low Gate Charge for Fast Switching Small Footprint 30% Smaller than TSOP6 V R TYP I Max ESD Protected Gate (BR)DSS DS(on) D AEC Q101 Qualified NVTJD4001N 1.0 4.0 V 250 mA 30 V These Devices are PbFree and are RoHS Compliant 1.5 2.5 V Applications Low Side Load Switch SOT363 LiIon Battery Supplied Devices Cell Phones, PDAs, DSC SC88 (6 LEADS) Buck Converters Level Shifts S 1 6 D 1 1 MAXIMUM RATINGS (T = 25C unless otherwise stated) J G 2 5 G 1 2 Parameter Symbol Value Units DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V D 3 4 S GS 2 2 Continuous Drain Steady T = 25 C I 250 mA A D Current (Note 1) State Top View T = 85 C 180 A Power Dissipation Steady T = 25 C P 272 mW A D MARKING DIAGRAM & (Note 1) State PIN ASSIGNMENT Pulsed Drain Current t =10 s I 600 mA DM D1 G2 S2 Operating Junction and Storage Temperature T , T 55 to 6 J STG C 150 1 TE M SOT363 Source Current (Body Diode) I 250 mA S CASE 419B Lead Temperature for Soldering Purposes 260 C T STYLE 26 L 1 (1/8 from case for 10 s) S1 G1 D2 THERMAL RESISTANCE RATINGS (Note 1) TE = Device Code Parameter Symbol Value Unit M = Date Code = PbFree Package JunctiontoAmbient Steady State R 458 C/W JA (Note: Microdot may be in either location) JunctiontoLead Steady State R 252 JL Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping 1. Surface mounted on FR4 board using min pad size (Cu area = 0.155 in sq 1 oz including traces). NTJD4001NT1G SOT363 3000 / Tape & (PbFree) Reel NVTJD4001NT1G SOT363 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 7 NTJD4001N/DNTJD4001N, NVTJD4001N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 100 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 56 mV/ C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, V = 30 V 1.0 A DSS GS DS GatetoSource Leakage Current I V = 0 V, V = 10 V 1.0 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 100 A 0.8 1.2 1.5 V GS(TH) GS DS D Gate Threshold Temperature V /T 3.2 mV/ C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.0 V, I = 10 mA 1.0 1.5 DS(on) GS D V = 2.5 V, I = 10 mA 1.5 2.5 GS D Forward Transconductance g V = 3.0 V, I = 10 mA 80 mS FS DS D CHARGES AND CAPACITANCES Input Capacitance C V = 0 V, f = 1.0 MHz, 20 33 pF GS ISS V = 5.0 V DS Output Capacitance C 19 32 OSS Reverse Transfer Capacitance C 7.25 12 RSS Total Gate Charge Q V = 5.0 V, V = 24 V, 0.9 1.3 nC G(TOT) GS DS I = 0.1 A D Threshold Gate Charge Q 0.2 G(TH) GatetoSource Charge Q 0.3 GS GatetoDrain Charge Q 0.2 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time td V = 4.5 V, V = 5.0 V, 17 ns (ON) GS DD I = 10 mA, R = 50 D G Rise Time tr 23 TurnOff Delay Time td 94 (OFF) Fall Time tf 82 DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V T = 25C 0.65 0.7 SD GS J I = 10 mA S T = 125C 0.45 J Reverse Recovery Time t V = 0 V, dI /dt = 8.0 A/ s, 12.4 ns RR GS S I = 10 mA S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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