Green DMN6040SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max D 100% Unclamped Inductive Switch (UIS) Test in Production V R Max (BR)DSS DS(ON) T = +25C A Low On-Resistance 40m V = 10V 5.0A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) 60V 55m V = 4.5V 4.2A Halogen and Antimony Free. Green Device (Note 3) GS Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description Case: SOT223 This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound. resistance (R ), yet maintain superior switching performance, DS(ON) UL Flammability Classification Rating 94V-0 (Note 1) making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Applications Terminals: Finish Matte Tin Annealed over Copper Leadframe. Motor Control Solderable per MIL-STD-202, Method 208 Transformer Driving Switch Weight: 0.112 grams (Approximate) DC-DC Converters Power Management Functions Uninterrupted Power Supply D SOT223 G S Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number Marking Reel Size (inches) Quantity per Reel DMN6040SE-13 N6040 13 2,500 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN6040SE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 5.0 A I A D State 4.0 TA = +70C Continuous Drain Current (Note 6) V = 10V GS T = +25C 7.1 A t < 10s A I D 5.5 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 30 A DM Maximum Body Diode Continuous Current I 3.4 A S Avalanche Current (Note 7) L = 0.1mH I 14.2 A AS Avalanche Energy (Note 7) L = 0.1mH E 10 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units TA = +25C 1.2 Total Power Dissipation (Note 5) W P D TA = +70C 0.7 Steady State 106 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t < 10s 53 TA = +25C 2 Total Power Dissipation (Note 6) W P D TA = +70C 1.2 Steady State 65 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t < 10s 34 Thermal Resistance, Junction to Case (Note 6) 9 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 30 40 V = 10V, I = 12A GS D Static Drain-Source On-Resistance m R DS(ON) 35 55 V = 4.5V, I = 6A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1,287 C ISS V = 25V, V = 0V DS GS Output Capacitance 57 pF C OSS f = 1.0MHz Reverse Transfer Capacitance 44 C RSS Gate Resistance R 1.2 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 10V) Q 22.4 GS G Total Gate Charge (V = 4.5V) Q 10.4 GS G nC V = 30V, I = 4.3A DS D Gate-Source Charge Q 4.9 GS Gate-Drain Charge Q 3.0 GD Turn-On Delay Time t 6.6 D(ON) Turn-On Rise Time 8.1 t V = 10V, V = 30V, R = 6, R GS DD G ns Turn-Off Delay Time 20.1 I = 4.3A t D D(OFF) Turn-Off Fall Time 4.0 t F Body Diode Reverse Recovery Time 18 ns t I = 4.3A, di/dt = 100A/s RR S Body Diode Reverse Recovery Charge 11.9 nC Q I = 4.3A, di/dt = 100A/s RR S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 July 2016 DMN6040SE www.diodes.com Diodes Incorporated Datasheet number: DS36106 Rev. 3 - 2