X-On Electronics has gained recognition as a prominent supplier of PSMN8R7-80PS,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN8R7-80PS,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN8R7-80PS,127 Nexperia

PSMN8R7-80PS,127 electronic component of Nexperia
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Part No.PSMN8R7-80PS,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHAN 80V 64A
Datasheet: PSMN8R7-80PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
393: USD 0.3466 ea
Line Total: USD 136.21 
Availability - 2668
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 393  Multiples: 393
Pack Size: 393
Availability Price Quantity
3588
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 2.035
10 : USD 1.375
100 : USD 1.155
500 : USD 1.0571
1000 : USD 1.0153

49
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 2.394
3 : USD 2.156
10 : USD 1.89
11 : USD 1.701
28 : USD 1.6072
250 : USD 1.582

2668
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 393
Multiples : 393
393 : USD 0.3466
500 : USD 0.3431
1000 : USD 0.3403
5000 : USD 0.3392

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN8R7-80PS,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN8R7-80PS,127 and other electronic components in the MOSFETs category and beyond.

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PSMN8R7-80PS N-channel 80 V 8.7 m standard level MOSFET in TO-220 Rev. 02 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j I drain current T =25C V =10V --90 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --170W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =10A --14 m R DSon GS D resistance T = 100 C see Figure 12 j 1 V =10V I =10A -7.5 8.7 m GS D T =25C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =25A -11 -nC GD GS D V =40 V see Figure 14 DS Q total gate charge - 52 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --120mJ DS(AL)S GS j(init) drain-source avalanche I =90A V 80 V D sup R =50 unclamped energy GS 1 Measured 3 mm from package.PSMN8R7-80PS Nexperia N-channel 80 V 8.7 m standard level MOSFET in TO-220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R7-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN8R7-80PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 1 November 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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