PSMN9R5-100BS,118 Nexperia

PSMN9R5-100BS N-channel 100 V 9.6 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V see Figure 1 --89 A D mb GS P total power dissipation T =25C see Figure 2 --211 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A T =25C - 8.16 9.6 m DSon GS D j resistance see Figure 13 Dynamic characteristics gate-drain charge V =10V I =60A V =50V -23 -nC Q GD GS D DS see Figure 14 see Figure 15 total gate charge - 82 - nC Q G(tot) Avalanche ruggedness non-repetitive V =10V T =25C I =89A - - 177 mJ E DS(AL)S GS j(init) D drain-source V 100 V unclamped R =50 sup GS avalanche energyPSMN9R5-100BS Nexperia N-channel 100 V 9.6 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN9R5-100BS D2PAK plastic single-ended surface-mounted package (D2PAK) SOT404 3 leads (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -63 A D GS mb V =10V T =25C see Figure 1 -89 A GS mb I peak drain current pulsed t 10 s T =25C - 355 A DM p mb see Figure 3 P total power dissipation T =25C see Figure 2 -211 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 89 A S mb I peak source current pulsed t 10 s T = 25 C - 355 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =89A - 177 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GS PSMN9R5-100BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 2 March 2012 2 of 14