PSMNR58-30YLH N-channel 30 V, 0.67 m, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology 12 November 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized for low R . Low I leakage even when hot, high efficiency and high current rated to 380 A, DSon DSS optimized for DC load switch and hot-swap applications. 2. Features and benefits 100% avalanche tested at I = 190 A (AS) Optimized for low R DSon Low leakage < 1 A at 25 C Low spiking and ringing for low EMI designs Optimized for 4.5 V gate drive Copper-clip for low parasitic inductance and resistance High reliability LFPAK package, qualified to 175 C Wave solderable exposed leads for optimal solder coverage and visual solder inspection 3. Applications Hot swap e-Fuse Power OR-ing DC switch / Load switch Battery protection Brushed and BLDC (brushless) motor control Synchronous rectification in AC-DC and DC-DC applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 380 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 333 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 0.54 0.67 m DSon GS D j resistance Fig. 10 V = 4.5 V I = 25 A T = 25 C - 0.71 0.9 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 15 V V = 4.5 V 3.4 19 38 nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge 25 55 91 nC G(tot)Nexperia PSMNR58-30YLH N-channel 30 V, 0.67 m, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Symbol Parameter Conditions Min Typ Max Unit Source-drain diode S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.91 - S S GS V = 15 V Fig. 16 DS 1 380A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected to drain 1 2 3 4 LFPAK56E Power- SO8 (SOT1023) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMNR58-30YLH LFPAK56E plastic, single-ended surface-mounted package (LFPAK56) SOT1023 Power-SO8 4 leads 1.27 mm pitch 7. Marking Table 4. Marking codes Type number Marking code PSMNR58-30YLH H5830L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 30 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 333 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 380 A D GS mb V = 10 V T = 100 C Fig. 2 - 347 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 1960 A DM p mb PSMNR58-30YLH All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 12 November 2019 2 / 12