X-On Electronics has gained recognition as a prominent supplier of SI3483DDV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3483DDV-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3483DDV-T1-GE3 Vishay

SI3483DDV-T1-GE3 electronic component of Vishay
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Part No.SI3483DDV-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P-Channel 30 V D-S MOSFET
Datasheet: SI3483DDV-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5424 ea
Line Total: USD 0.54 
Availability - 1
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5424
10 : USD 0.4302
30 : USD 0.3816
100 : USD 0.3218
500 : USD 0.2938
1000 : USD 0.2788

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI3483DDV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3483DDV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si3483DDV www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES TSOP-6 Single S TrenchFET Gen IV p-channel power MOSFET 4 D 100 % R and UIS tested 5 g D 6 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 G 2 APPLICATIONS D 1 S Load switch D Top View Marking code: BT G PRODUCT SUMMARY V (V) -30 DS R max. ( ) at V = -10 V 0.0312 DS(on) GS R max. ( ) at V = -4.5 V 0.0513 DS(on) GS Q typ. (nC) 4.5 D g a, d I (A) -8 D P-Channel MOSFET Configuration Single ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and halogen-free Si3483DDV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V -30 DS V Gate-source voltage V -20 / +16 GS a T = 25 C -8 C T = 70 C -6.4 C Continuous drain current (T = 150 C) I J D b, c T = 25 C -6.4 A b, c T = 70 C -5.2 A A Pulsed drain current (t = 100 s) I -30 DM T = 25 C -2.5 C Continuous source-drain diode current I S b, c T = 25 C -1.67 A T = 25 C 3 C T = 70 C 2 C Maximum power dissipation P W D b, c T = 25 C 2 A b, c T = 70 C 1.3 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b Maximum junction-to-ambient t 5 s R 52 62.5 thJA C/W Maximum junction-to-case (drain) Steady state R 34 41 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 5 s d. Maximum under steady state conditions is 110 C/W S19-0383-Rev. A, 29-Apr-2019 Document Number: 76252 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si3483DDV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V DS GS D V temperature coefficient V /T - -17.6 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -5 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I =-250 A -1 - -2.2 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = -20 V / +16 V - - 100 nA GSS DS GS V = -30 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I A DSS V = -30 V, V = 0 V, T = 70 C - - -10 DS GS J a On-state drain current I V -10 V, V = -10 V -5 - - A D(on) DS GS V = -10 V, I = -5 A - 0.0260 0.0312 GS D a Drain-source on-state resistance R DS(on) V = -4.5 V, I = -3 A - 0.0410 0.0513 GS D a Forward transconductance g V = -10 V, I = -5 A - 30 - S fs DS D b Dynamic Input capacitance C - 580 - iss Output capacitance C V = -15 V, V = 0 V, f = 1 MHz - 245 - pF oss DS GS Reverse transfer capacitance C -35 - rss V = -15 V, V = -10 V, I = -6.4 A - 9.5 14.5 DS GS D Total gate charge Q g -4.5 9 nC Gate-source charge Q V = -15 V, V = -4.5 V, I = -6.4 A -2.6 - gs DS GS D Gate-drain charge Q -1.3 - gd Gate resistance R f = 1 MHz 3.4 20 34 g Turn-on delay time t -15 30 d(on) Rise time t -33 66 r V = -15 V, R = 2.9 , I -5.2 A, DD L D V = -10 V, R = 1 Turn-off delay time t GEN g -30 60 d(off) Fall time t -40 60 f ns Turn-on delay time t -26 52 d(on) Rise time t - 140 280 r V = -15 V, R = 2.9 , I -5.2 A, DD L D V = -4.5 V, R = 1 Turn-off delay time t GEN g -26 52 d(off) Fall time t -42 84 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - -2.5 S C A Pulse diode forward current I -- -30 SM Body diode voltage V I = -5.2 A, V = 0 V - -0.8 -1.2 V SD S GS Body diode reverse recovery time t -21 32 ns rr Body diode reverse recovery charge Q - 9 18 nC rr I = -5.2 A, di/dt = 100 A/s, F T = 25 C Reverse recovery fall time t J -9 - a ns Reverse recovery rise time t -12 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0383-Rev. A, 29-Apr-2019 Document Number: 76252 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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