Si3552DV www.vishay.com Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES TSOP-6 Dual D TrenchFET power MOSFET 2 4 S 1 100 % R tested g 5 D 1 Material categorization: 6 for definitions of compliance please see www.vishay.com/doc 99912 Available 3 G S 2 D 1 2 2 S 2 1 G 1 Top View G 2 PRODUCT SUMMARY G 1 N-CHANNEL P-CHANNEL V (V) 30 -30 DS R ( ) at V = 10 V 0.105 0.200 DS(on) GS R ( ) at V = 4.5 V 0.175 0.360 DS(on) GS S D 1 2 Q typ. (nC) 2.1 2.4 g a I (A) 2.5 -1.8 P-Channel MOSFET D N-Channel MOSFET Configuration N- and p-pair ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free Si3552DV-T1-E3 Lead (Pb)-free and halogen-free Si3552DV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL N-CHANNEL P-CHANNELUNIT Drain-source voltage V 30 -30 DS V Gate-source voltage V 20 20 GS T = 25 C 2.5 -1.8 A a, b Continuous drain current (T = 150 C) I J D T = 70 C 2 -1.2 A A Pulsed drain current I 8-7 DM a, b Continuous source current (diode conduction) I 1.05 -1.05 S T = 25 C 1.15 A a, b maximum power dissipation P W D = 70 C 0.73 T A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 5 s 93 110 a Maximum junction-to-ambient R thJA Steady state 130 150 C/W Maximum junction-to-lead Steady state R 75 90 thJL Notes a. Surface mounted on FR4 board b. t 5 s S09-2110-Rev. C, 12-Oct-09 Document Number: 70971 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si3552DV www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static V = V , I = 250 A N-Ch 1 - - DS GS D Gate threshold voltage V V GS(th) V = V , I = -250 A P-Ch -1 - - DS GS D N-Ch - - 100 Gate-body leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - 100 V = 24 V, V = 0 V N-Ch - - 1 DS GS V = -24 V, V = 0 V P-Ch - - -1 DS GS Zero gate voltage drain current I A DSS V = 24 V, V = 0 V, T = 55 C N-Ch - - 5 DS GS J V = -24 V, V = 0 V, T = 55 C P-Ch - - -5 DS GS J V = 5 V, V = 10 V N-Ch 5 - - DS GS a On-state drain current I A D(on) V = -5 V, V = -10 V P-Ch -5 - - DS GS V = 10 V, I = 2.5 A N-Ch - 0.085 0.105 GS D V = -10 V, I = -1.8 A P-Ch - 0.165 0.200 GS D a Drain-source on-state resistance R DS(on) V = 4.5 V, I = 2 A N-Ch - 0.140 0.175 GS D V = -4.5 V, I = -1.2 A P-Ch - 0.298 0.360 GS D V = 10 V, I = 2.5 A N-Ch - 4.3 - DS D a Forward transconductance g S fs V = -15 V, I = -1.8 A P-Ch - 2.4 - DS D I = 1.05 A, V = 0 V N-Ch - 0.81 1.1 S GS a Diode forward voltage V V SD I = -1.05 A, V = 0 V P-Ch - -0.83 -1.1 S GS b Dynamic N-Ch - 2.1 3.2 Total gate charge Q g P-Ch - 2.4 3.6 N-Channel V = 15 V, V = 5 V, I = 1.8 A DS GS D N-Ch - 0.7 - Gate-source charge Q nC gs P-Ch - 0.9 - P-Channel V = -15 V, V = -5 V, I = -1.8 A N-Ch - 0.7 - DS GS D Gate-drain charge Q gd P-Ch - 0.8 - N-Ch 0.5 - 2.4 Gate resistance R g P-Ch 3 - 11 N-Ch - 7 11 Turn-on delay time t d(on) P-Ch - 8 12 N-Channel N-Ch - 9 14 V = 15 V, R = 15 DD L Rise time t r I 1 A, V = 10 V, R = 6 D GEN g P-Ch - 12 18 N-Ch - 13 20 P-Channel Turn-off delay time t ns d(off) V = -15 V, R = 15 P-Ch - 12 18 DD L I -1 A, V = -10 V, R = 6 D GEN g N-Ch - 5 8 Fall time t f P-Ch - 7 11 I = 1.05 A, di/dt = 100 A/s N-Ch - 35 60 F Source-drain reverse recovery time t rr I = -1.05 A, di/dt = 100 A/s P-Ch - 30 60 F Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-2110-Rev. C, 12-Oct-09 Document Number: 70971 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000