New Product Si4122DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0045 at V = 10 V 27.2 GS 100 % R and UIS Tested COMPLIANT g 40 29 nC 0.006 at V = 4.5 V 23.5 GS APPLICATIONS DC/DC Conversion SO-8 D SD 1 8 SD 2 7 SD 3 6 G GD 4 5 Top View S Ordering Information: Si4122DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 40 DS V Gate-Source Voltage V 25 GS T = 25 C 27.2 C T = 70 C 20.1 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 19.2 b, c T = 70 C A 15.3 A I Pulsed Drain Current 70 DM T = 25 C 5.4 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.7 I Single Pulse Avalanche Current 40 AS L = 0.1 mH Avalanche Energy E mJ 80 AS T = 25 C 6.0 C T = 70 C 3.3 C P Maximum Power Dissipation W D b, c T = 25 C A 3.0 b, c T = 70 C A 1.9 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 33 42 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 16 21 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 C/W. Document Number: 68665 www.vishay.com S-81220-Rev. A, 02-Jun-08 1New Product Si4122DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 40 V DS GS D V Temperature Coefficient V /T 43 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.0 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 25 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0036 0.0045 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0048 0.006 GS D a g V = 15 V, I = 15 A 65 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 4200 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 475 pF oss DS GS Reverse Transfer Capacitance C 225 rss V = 20 V, V = 10 V, I = 10 A 62 95 DS GS D Q Total Gate Charge g 29 44 nC Gate-Source Charge Q V = 20 V, V = 4.5 V, I = 10 A 12 gs DS GS D Q Gate-Drain Charge 9 gd Gate Resistance R f = 1 MHz 0.2 1.0 2.0 g t Turn-On Delay Time 42 70 d(on) Rise Time t 34 60 r V = 20 V, R = 2 DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 45 75 d(off) t Fall Time 28 45 f ns t Turn-On Delay Time 14 25 d(on) t Rise Time V = 20 V, R = 2 10 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 35 60 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 5.4 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.72 1.1 V SD S t Body Diode Reverse Recovery Time 31 50 ns rr Q Body Diode Reverse Recovery Charge 31 50 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 18 a ns t Reverse Recovery Rise Time 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68665 2 S-81220-Rev. A, 02-Jun-08