Si4420BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.0085 at V = 10 V 13.5 GS TrenchFET Power MOSFET 30 0.0110 at V = 4.5 V 11 GS 100 % R Tested g SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4420BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 13.5 9.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 10.8 7.5 A I Pulsed Drain Current 50 A DM a I 2.3 1.26 Continuous Source Current (Diode Conduction) S Single Pulse Avalanche Current I 20 AS L = 0.1 mH E Avalanche Energy 20 mJ AS T = 25 C 2.5 1.4 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.9 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t < 10 s 40 50 a R Maximum Junction-to-Ambient thJA Steady State 70 90 C/W R Maximum Junction-to-Foot (Drain) Steady State 23 28 thJF Notes: a. Surface Mounted on FR4 board, t 10 s. Document Number: 73067 www.vishay.com S09-0322-Rev. C, 02-Mar-09 140 35 30 25 20 15 T = 125 C C 10 25 C 5 - 55 C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Gate-to-Source Voltage (V) GS Si4420BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 13.5 A 0.007 0.0085 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 11 A 0.009 0.0110 GS D a g V = 15 V, I = 13.5 A 50 S Forward Transconductance fs DS D a V I = 2.3 A, V = 0 V 0.75 1.1 V Diode Forward Voltage SD S GS b Dynamic Q V = 15 V, V = 5 V, I = 13.5 A Gate Charge 16 25 g DS GS D Q Total Gate Charge 31 50 gt nC Gate-Source Charge Q V = 15 V, V = 10 V, I = 13.5 A 6.6 gs DS GS D Q Gate-Drain Charge 4.0 gd Gate Resistance R 0.5 1.0 1.5 g t Turn-On Delay Time 15 25 d(on) Rise Time t 11 18 V = 15 V, R = 15 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 40 60 ns d(off) t Fall Time 12 20 f t I = 2.3 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 30 50 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 45 V = 10 V thru 4 V GS 40 35 30 25 20 15 10 3 V 5 0 0 1234 5 V - Drain-to-Source Voltage (V) DS Transfer Characteristics Output Characteristics www.vishay.com Document Number: 73067 2 S09-0322-Rev. C, 02-Mar-09 I - Drain Current (A) D I - Drain Current (A) D