Si4455DY Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) DS DS(on) D g 100% R and UIS Tested g c 0.295 at V = - 10 V - 8.9 GS Material categorization: - 150 23.2 nC c For definitions of compliance please see 0.315 at V = - 6 V - 8.6 GS www.vishay.com/doc 99912 Available SO-8 APPLICATIONS S 1 8 D Active Clamp in Intermediate DC/ S DC Power Supplies S D 2 7 H-Bridge High Side Switch for S 3 6 D Lighting Application G G D 4 5 Top View D Ordering Information: Si4455DY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si4455DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 150 DS V V Gate-Source Voltage 20 GS T = 25 C - 2.8 C T = 70 C - 2.3 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 2 A a, b T = 70 C - 1.6 A A I - 15 Pulsed Drain Current DM T = 25 C - 4.9 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 2.5 A I - 15 Avalanche Current AS L = 0.1 mH Single-Pulse Avalanche Energy E 11.25 mJ AS T = 25 C 5.9 C T = 70 C 3.8 C P Maximum Power Dissipation W D a, b T = 25 C 3.1 A a, b T = 70 C 2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Based on T = 25 C. C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b R t 10 s 33 40 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 80 C/W. Document Number: 68631 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-1371-Rev. C, 24-Jun-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4455DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 150 V DS GS D V Temperature Coefficient V /T - 165 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 6.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 8 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 4 A 0.245 0.295 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 3 A 0.260 0.315 GS D a g V = - 15 V, I = 4 A 12 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1190 iss C V = - 50 V, V = 0 V, f = 1 MHz Output Capacitance 61 pF oss DS GS C Reverse Transfer Capacitance 42 rss V = - 75 V, V = - 10 V, I = - 3 A 27.5 42 DS GS D Q Total Gate Charge g 23.2 35 nC Q V = - 75 V, V = - 6 V, I = - 3 A Gate-Source Charge 5.4 gs DS GS D Q Gate-Drain Charge 8.4 gd R Gate Resistance f = 1 MHz 6.1 9.2 g t Turn-On Delay Time 20 30 d(on) t V = - 75 V, R = 25 Rise Time 95 145 r DD L t I - 3 A, V = - 6 V, R = 1 Turn-Off DelayTime 38 60 d(off) D GEN g t Fall Time 34 51 f ns t Turn-On Delay Time 11 18 d(on) t V = - 75 V, R = 25 Rise Time 28 42 r DD L t I - 3 A, V = - 10 V, R = 1 Turn-Off DelayTime 52 78 d(off) D GEN g t Fall Time 35 53 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 13 S C A a I - 15 Pulse Diode Forward Current SM V I = - 3 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 65 90 ns rr Q Body Diode Reverse Recovery Charge 180 270 nC rr I = - 4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 45 a ns t Reverse Recovery Rise Time 20 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 68631 2 S13-1371-Rev. C, 24-Jun-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000